Silicon nitride fusia silikon carbide
Si3N4 faʻapipiʻi SiC ceramic refractory mea, ua fefiloi ma maualuga mama SIC paʻu lelei ma Silicon paʻu, ina ua uma le faaseeina ala, tali sintered i lalo o le 1400 ~ 1500 °C.I le taimi o le sintering course, faʻatumu le maualuga o le Nitrogen mama i totonu o le ogaumu, ona tali atu lea o le silicon ma le Nitrogen ma faʻatupuina Si3N4, O lea o le Si3N4 faʻapipiʻiina mea SiC e aofia ai le silicon nitride (23%) ma le silicon carbide (75%) e avea ma mea autu. , fefiloi ma mea faʻaola, ma faʻapipiʻiina i le faʻafefiloi, extrusion poʻo le sasaa, ona faia lea pe a uma ona faʻamago ma nitrogenization.
Fa'ailoga ma mea lelei:
1.Hfa'apalepale i le vevela
2. High conductivity vevela ma teteʻe tetee
3. High malosi faʻainisinia ma faʻafefe abrasion
4.Excellent malosi malosi ma le corrosion tetee
Matou te tuʻuina atu le maualuga ma le saʻo masini NSiC vaega ceramic lea e faʻaogaina e
1. Slip lafo
2. Extruding
3.Uni Axial Pressing
4. Isostatic Pressing
Pepa Fa'amaumauga o Mea
> Tulaga Kemisi | Sic | 75% |
Si3N4 | ≥23% | |
Saoloto Si | 0% | |
Tele tele (g/cm3) | 2.70~2.80 | |
Fa'aaliga manino (%) | 12~15 | |
Malosi punou ile 20 ℃(MPa) | 180~190 | |
Malosi punou ile 1200 ℃(MPa) | 207 | |
Malosi punou ile 1350 ℃(MPa) | 210 | |
Malosi fa'amalosi ile 20 ℃(MPa) | 580 | |
Fa'avevela vevela ile 1200 ℃(w/mk) | 19.6 | |
Fa'ateleina le fa'amama vevela i1200 ℃(x 10-6/C) | 4.70 | |
Tete'e te'i vevela | Lelei | |
Max.vevela (℃) | 1600 |