10x10mm Nonpolar M-vaalele Alumea Substrate

Fa'amatalaga Puupuu:

10x10mm Nonpolar M-vaalele Alumea Substrate- Lelei mo faʻaoga optoelectronic sili atu, e ofoina atu le maualuga o le tioata ma le mautu i se faʻapipiʻi, maualuga-saʻo saʻo.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's10x10mm Nonpolar M-vaalele Alumea Substrateua mamanuina ma'oti e fa'amalieina mana'oga sa'o o talosaga optoelectronic maualuluga. O lenei substrate o loʻo faʻaalia ai le faʻaogaina o le M-vaalele e le polar, e taua tele mo le faʻaitiitia o aʻafiaga o le polarization i masini e pei o LED ma laser diodes, e taʻitaʻia ai le faʻaleleia o le faʻatinoga ma le lelei.

O le10x10mm Nonpolar M-vaalele Alumea Substrateo lo'o faia i se tulaga fa'apitoa fa'a tioata, fa'amautinoaina le la'ititi o fa'aletonu ma le maualuga o le fa'atonuga. E avea lea ma filifiliga lelei mo le tuputupu aʻe o le epitaxial o ata maualuga III-nitride, lea e taua mo le atinaʻeina o masini optoelectronic e sosoo ai.

Semicera's sa'o fa'ainisinia e fa'amautinoaina e ta'itasi10x10mm Nonpolar M-vaalele Alumea Substratee ofoina atu le mafiafia faifai pea ma le mafolafola o luga, lea e taua tele mo le teuina o ata tifaga ma le gaosiga o masini. E le gata i lea, o le lapopoa o le substrate e fetaui lelei mo suʻesuʻega ma siosiomaga gaosiga, faʻatagaina mo le faʻaogaina fetuutuunai i le tele o talosaga. Faʻatasi ai ma lona faʻamautu lelei o le vevela ma le vailaʻau, o lenei mea faʻapipiʻi e maua ai se faʻavae faʻalagolago mo le atinaʻeina o tekonolosi optoelectronic.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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