Semiceraua mitamita e tuuina atu le30mm Aluminium Nitride Wafer Substrate, o se mea pito i luga e fa'ainisinia e fa'amalieina mana'oga fa'aonaponei fa'aeletonika ma optoelectronic. Aluminum Nitride (AlN) substrates e taʻutaʻua ona o lo latou mataʻina o le faʻaogaina o le vevela ma mea faʻapipiʻi eletise, ma avea ai ma filifiliga sili mo masini maualuga.
Vaega Autu:
• Tulaga Fa'avevela Fa'avevela: O le30mm Aluminium Nitride Wafer Substratefa'aalia le fa'avevelaina o le vevela e o'o atu i le 170 W/mK, e sili atu le maualuga nai lo isi mea fa'apipi'i, fa'amautinoa le fa'amama lelei o le vevela i fa'aoga malosi.
•Insulation Maualuga Eletise: Fa'atasi ai ma mea lelei fa'amama eletise, o lenei mea e fa'aitiitia ai le felafolafoa'iga ma fa'alavelave fa'ailo, ma fa'amalieina mo fa'aoga RF ma microwave.
•Malosi Fa'ainisinia: O le30mm Aluminium Nitride Wafer Substrateofo atu le malosi fa'ainisinia sili atu ma le mautu, fa'amautinoa le tumau ma le fa'amaoni e o'o lava i lalo o tulaga fa'agaioiga faigata.
•Talosaga Fetuuna'i: O lenei substrate e lelei atoatoa mo le faʻaaogaina i le maualuga o le eletise, laser diodes, ma vaega RF, e maua ai se faʻavae malosi ma faʻalagolago mo au galuega sili ona faigata.
•Faiga Fa'atonu: Semicera fa'amautinoa o lo'o fa'apipi'iina so'o fa'ato'aga ta'itasi ma le sa'o aupito maualuga, e ofoina atu le mafiafia toniga ma le tulaga lelei o luga e fa'afetaui ai tulaga sa'o o masini fa'aeletonika.
Fa'ateleina le lelei ma le fa'amaoni o au masini ile Semicera's30mm Aluminium Nitride Wafer Substrate. O matou mea'ai ua mamanuina e tu'uina atu ai fa'atinoga sili atu, fa'amautinoaina o lo'o fa'agaoioi au faiga fa'aeletonika ma optoelectronic i le mea sili. Fa'atuatuaina Semicera mo mea fa'apitoa e ta'ita'ia ai le alamanuia i tulaga lelei ma fa'afouga.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Fa'a tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga ole mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amamafa | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
