3C-SiC Wafer Substrate

Fa'amatalaga Puupuu:

Semicera 3C-SiC Wafer Substrates e ofoina atu le maualuga o le vevela ma le maualuga o le eletise male eletise, lelei mo masini eletise ma masini maualuga. O nei substrates e sa'o-inisinia mo le fa'atinoga sili ona lelei i si'osi'omaga faigata, fa'amautinoa le fa'atuatuaina ma le lelei. Filifili Semicera mo fofo fou ma sili atu.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera 3C-SiC Wafer Substrates ua fa'ainisinia e tu'uina atu se fa'avae malosi mo le isi augatupulaga eletise eletise ma masini maualuga. Fa'atasi ai ma mea e sili atu le vevela ma uiga fa'aeletise, o nei substrates ua mamanuina e fa'afetaui ai mana'oga mana'omia o tekinolosi fa'aonaponei.

O le 3C-SiC (Cubic Silicon Carbide) fausaga o Semicera Wafer Substrates e ofoina atu tulaga lelei tulaga ese, e aofia ai le maualuga o le vevela ma le maualalo o le faʻalauteleina o le vevela faʻatusatusa i isi mea semiconductor. O le mea lea e avea ai i latou ma filifiliga sili mo masini o loʻo faʻaogaina i lalo o le vevela vevela ma tulaga maualuga-malosi.

Faʻatasi ai ma le maualuga o le eletise male eletise ma le faʻamautuina o vailaʻau sili atu, Semicera 3C-SiC Wafer Substrates faʻamautinoa le umi o le faʻatinoga ma le faʻamaoni. O nei mea totino e taua tele mo faʻaoga e pei o le radar maualuga, moli faʻamalo, ma le eletise eletise, lea e sili ona taua le lelei ma le tumau.

O le tautinoga a Semicera i le tulaga lelei o loʻo atagia i le gaosiga faʻapitoa o latou 3C-SiC Wafer Substrates, faʻamautinoa le tutusa ma le tutusa i vaega uma. O lenei sa'o sa'o e saofagā i le fa'atinoga atoa ma le umi o masini fa'aeletoroni o lo'o fausia i luga.

E ala i le filifilia o Semicera 3C-SiC Wafer Substrates, e maua ai e le au gaosi mea le avanoa i se mea faʻapitoa e mafai ai ona atinaʻe mea laiti, vave, ma sili atu ona lelei eletise. Semicera o loʻo faʻaauau pea ona lagolagoina le faʻafouina o tekonolosi e ala i le tuʻuina atu o fofo faʻalagolago e fetaui ma manaoga faʻaleleia o le semiconductor industry.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

tech_1_2_size
SiC wafers

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