Semicera 3C-SiC Wafer Substrates ua fa'ainisinia e tu'uina atu se fa'avae malosi mo le isi augatupulaga eletise eletise ma masini maualuga. Fa'atasi ai ma mea e sili atu le vevela ma uiga fa'aeletise, o nei substrates ua mamanuina e fa'afetaui ai mana'oga mana'omia o tekinolosi fa'aonaponei.
O le 3C-SiC (Cubic Silicon Carbide) fausaga o Semicera Wafer Substrates e ofoina atu tulaga lelei tulaga ese, e aofia ai le maualuga o le vevela ma le maualalo o le faʻalauteleina o le vevela faʻatusatusa i isi mea semiconductor. O le mea lea e avea ai i latou ma filifiliga sili mo masini o loʻo faʻaogaina i lalo o le vevela vevela ma tulaga maualuga-malosi.
Faʻatasi ai ma le maualuga o le eletise male eletise ma le faʻamautuina o vailaʻau sili atu, Semicera 3C-SiC Wafer Substrates faʻamautinoa le umi o le faʻatinoga ma le faʻamaoni. O nei meatotino e taua tele mo faʻaoga e pei o le radar maualuga, moli faʻamalo, ma le eletise eletise, lea e sili ona taua le lelei ma le tumau.
O le tautinoga a Semicera i le tulaga lelei o loʻo atagia i le gaosiga faʻapitoa o latou 3C-SiC Wafer Substrates, faʻamautinoa le tutusa ma le tutusa i vaega uma. O lenei sa'o sa'o e fesoasoani i le fa'atinoga atoa ma le umi o le fa'aogaina o masini fa'aeletoroni ua fausia i luga.
E ala i le filifilia o Semicera 3C-SiC Wafer Substrates, e maua ai e le au gaosi mea le avanoa i se mea faʻapitoa e mafai ai ona atinaʻe mea laiti, vave, ma sili atu ona lelei eletise. Semicera o loʻo faʻaauau pea ona lagolagoina le faʻafouina o tekonolosi e ala i le tuʻuina atu o fofo faʻalagolago e fetaui ma manaoga faʻaleleia o le semiconductor industry.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Fa'a tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga ole mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amamafa | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
