Semicera's 4" 6" Semi-Insulating SiC Substrate o se mea e sili ona lelei ua fuafuaina e faʻamalieina manaʻoga faʻapitoa o le RF ma le mana masini. O le substrate e tu'ufa'atasia le lelei tele o le fa'avevelaina o le vevela ma le maualuga o le malepelepe o le silicon carbide fa'atasi ai ma meatotino semi-insulating, ma avea ai ma filifiliga lelei mo le atina'eina o masini semiconductor.
4" 6" Semi-Insulating SiC Substrate o lo'o gaosia ma le fa'aeteete ina ia mautinoa le maualuga o mea mama ma fa'aauau le fa'atinoina o le semi-insulating. O lenei mea e faʻamautinoa ai e tuʻuina atu e le substrate le faʻaogaina o le eletise e manaʻomia i masini RF e pei o amplifier ma transistors, aʻo tuʻuina atu foʻi le faʻaogaina o le vevela e manaʻomia mo talosaga maualuga. O le taunu'uga o se mea fa'apitoa e mafai ona fa'aogaina i le tele o mea fa'aeletoroni fa'atino maualuga.
E iloa e Semicera le taua o le tu'uina atu o mea fa'alagolago, leai se fa'aletonu mo fa'aoga semiconductor taua. O la matou 4" 6" Semi-Insulating SiC Substrate e gaosia i le fa'aogaina o auala fa'aola e fa'aitiitia ai fa'aletonu tioata ma fa'aleleia le tutusa o mea. O lenei mea e mafai ai e le oloa ona lagolagoina le gaosiga o masini ma le faʻaleleia atili o le faʻatinoga, mautu, ma le olaga atoa.
O le tautinoga a Semicera i le lelei e faʻamautinoa ai le matou 4" 6" Semi-Insulating SiC Substrate e tuʻuina atu faʻatuatuaina ma faʻaauau le faʻatinoga i le tele o faʻaoga. Pe o lo'o e atia'e ni masini fa'avevesi po'o ni fa'amalosi'i malosi, o matou semi-insulating SiC substrates e maua ai le fa'avae mo le manuia o isi augatupulaga fa'aeletonika.
Fa'avae fa'avae
| Tele | 6-inisi | 4-inisi |
| Diamita | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
| Fa'asagaga i luga | {0001}±0.2° | |
| Primary Flat Orientation | / | <1120>±5° |
| SecondaryFlat Orientation | / | Silisi fa'asaga i luga:90° CW mai Prime flat士5° |
| Primary Flat Umi | / | 32.5 mm ma le 2.0 mm |
| Lua Mafolafola Umi | / | 18.0 mm i le 2.0 mm |
| Notch Orientation | <1100>±1.0° | / |
| Notch Orientation | 1.0mm+0.25 mm/-0.00 mm | / |
| Notch Angle | 90°+5°/-1° | / |
| mafiafia | 500.0um ile 25.0um | |
| Ituaiga Conductive | Semi-insulating | |
Fa'amatalaga lelei tioata
| ltem | 6-inisi | 4-inisi |
| Tete'e | ≥1E9Q·cm | |
| Polytype | Leai se faatagaina | |
| Micropipe Density | ≤0.5/cm2 | ≤0.3/cm2 |
| Papatusi Hex ile malamalama maualuga | Leai se faatagaina | |
| Vaaiga Carbon Inclusions e maualuga | Vaega fa'aopoopo≤0.05% | |
Resistivity - Faʻataʻitaʻiina e le le faʻafesoʻotaʻi pepa tetee.
Micropipe Density
