4 Inisi Maualuluga Mama Semi-Insulating HPSI SiC Lua-itu Polished Wafer Substrate

Fa'amatalaga Puupuu:

Semicera's 4 Inisi High Purity Semi-Insulating (HPSI) SiC Lua-itu Polished Wafer Substrates ua sa'o-inisinia mo le fa'atinoga fa'aeletonika maualuga. O nei wafers e maua ai le lelei tele o le vevela ma le faʻaogaina o le eletise, lelei mo faʻaoga semiconductor maualuga. Talitonuina Semicera mo le tulaga le mafaatusalia ma le fou i tekinolosi wafer.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 4 Inisi High Purity Semi-Insulating (HPSI) SiC Lua Itu Polished Wafer Substrates ua mamanuina e fa'amalieina mana'oga o le semiconductor alamanuia. O nei substrates ua mamanuina ma tulaga ese le mafolafola ma le mama, e ofoina atu se tulaga sili ona lelei mo masini faaeletonika tipi.

O nei HPSI SiC wafers o loʻo faʻailogaina e ala i le maualuga o le faʻaogaina o le vevela ma le eletise eletise, ma avea ai i latou ma filifiliga sili ona lelei mo faʻaoga maualuga ma maualuga. O le faiga fa'alila lua itu e fa'amautinoa ai le la'ititi o le lau'ele'ele, e taua tele mo le fa'aleleia o le fa'atinoga o masini ma le umi o le ola.

O le maualuga o le mama o Semicera's SiC wafers e faʻaitiitia ai faaletonu ma le mama, e oʻo atu ai i le maualuga o fua o fua ma le faʻalagolagoina o masini. O nei substrates e talafeagai mo le tele o faʻaoga, e aofia ai masini microwave, eletise eletise, ma tekonolosi LED, lea e manaʻomia ai le saʻo ma le tumau.

Faatasi ai ma le taulaʻi i le faʻafouga ma le lelei, e faʻaogaina e Semicera auala faʻapitoa gaosiga e gaosia ai wafers e fetaui ma manaʻoga faʻaonaponei faʻaonaponei. O le faʻalelei faʻalua-itu e le gata ina faʻaleleia ai le malosi faʻainisinia ae faʻafaigofie atili ai le tuʻufaʻatasia ma isi mea semiconductor.

E ala i le filifilia o Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, e mafai e le au gaosi oloa ona faʻaogaina faʻamanuiaga o le faʻaleleia o le faʻaogaina o le vevela ma le faʻaogaina o le eletise, faʻapipiʻiina le ala mo le atinaʻeina o masini eletise sili atu ona lelei ma mamana. Semicera o loʻo faʻaauau pea ona taʻitaʻia le alamanuia ma lana tautinoga i le lelei ma le alualu i luma tekinolosi.

Aitema

Gaosiga

Suesuega

Faafoliga

Fa'a tioata

Polytype

4H

Fa'asagaga i luga ole mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amamafa

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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