Semicera's 4 Inisi High Purity Semi-Insulating (HPSI) SiC Lua Itu Polished Wafer Substrates ua mamanuina e fa'amalieina mana'oga o le semiconductor alamanuia. O nei substrates ua mamanuina ma tulaga ese le mafolafola ma le mama, e ofoina atu se tulaga sili ona lelei mo masini faaeletonika tipi.
O nei HPSI SiC wafers o loʻo faʻailogaina e ala i le maualuga o le faʻaogaina o le vevela ma le eletise eletise, ma avea ai i latou ma filifiliga sili ona lelei mo faʻaoga maualuga ma maualuga. O le faiga fa'alila lua itu e fa'amautinoa ai le la'ititi o le lau'ele'ele, e taua tele mo le fa'aleleia o le fa'atinoga o masini ma le umi o le ola.
O le maualuga o le mama o Semicera's SiC wafers e faʻaitiitia ai faʻaletonu ma le mama, e oʻo atu ai i le maualuga o fua o fua ma le faʻatuatuaina o masini. O nei substrates e talafeagai mo le tele o faʻaoga, e aofia ai masini microwave, eletise eletise, ma tekonolosi LED, lea e manaʻomia ai le saʻo ma le tumau.
Faatasi ai ma le taulaʻi i le faʻafouga ma le lelei, e faʻaogaina e Semicera auala faʻapitoa gaosiga e gaosia ai wafers e fetaui ma manaʻoga faʻaonaponei faʻaonaponei. O le faʻalelei faʻalua itu e le gata ina faʻaleleia ai le malosi faʻainisinia ae faʻafaigofie ai foʻi le tuʻufaʻatasia lelei ma isi mea semiconductor.
E ala i le filifilia o Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, e mafai e le au gaosi oloa ona faʻaogaina faʻamanuiaga o le faʻaleleia o le faʻaogaina o le vevela ma le faʻaogaina o le eletise, faʻapipiʻiina le ala mo le atinaʻeina o masini eletise sili atu ona lelei ma mamana. Semicera o loʻo faʻaauau pea ona taʻitaʻia le alamanuia ma lana tautinoga i le lelei ma le alualu i luma tekinolosi.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Parata tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga o mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amama | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
