4 Inisi N-ituaiga SiC Substrate

Fa'amatalaga Puupuu:

Semicera's 4 Inisi N-ituaiga SiC Substrates ua mamanuina ma'oti mo le maualuga atu o le eletise ma le vevela i le eletise eletise ma le tele o taimi. O nei substrates e ofoina atu le amio lelei ma le mautu, ma avea ai ma mea lelei mo masini semiconductor e sosoo ai. Fa'atuatuaina Semicera mo le sa'o ma le lelei i mea fa'apitoa.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 4 Inisi N-ituaiga SiC Substrates ua mamanuina ina ia ausia tulaga saʻo o le semiconductor alamanuia. O nei substrates e maua ai se faʻavae maualuga mo le tele o mea faʻaeletoroni faʻaogaina, e ofoina atu le faʻaogaina ma mea faʻavela.

O le N-type doping o nei SiC substrates e faʻaleleia ai le faʻaogaina o le eletise, ma faʻapitoa ai mo faʻaoga maualuga ma maualuga. O lenei meatotino e mafai ai mo le faʻaogaina lelei o masini e pei o diodes, transistors, ma amplifiers, lea e taua tele ai le faʻaitiitia o le malosi.

E fa'aogaina e Semicera faiga fa'aonaponei fa'aonaponei ina ia fa'amautinoaina o lo'o fa'aalia e mea'ai ta'itasi le tulaga lelei ma le tutusa. O lenei sa'o e taua tele mo fa'aoga i le eletise eletise, masini microwave, ma isi tekinolosi e mana'omia ai le fa'atuatuaina fa'atinoga i lalo o tulaga ogaoga.

O le tu'ufa'atasia ole Semicera's N-type SiC substrates i lau gaosiga o lona uiga o le fa'amanuiaina mai mea e maua ai le sili atu o le vevela ma le fa'amautuina o le eletise. O nei substrates e lelei mo le fatuina o vaega e manaʻomia ai le tumau ma le lelei, e pei o le suiga o le eletise ma le RF amplifier.

E ala i le filifilia o Semicera's 4 Inch N-type SiC Substrates, o lo'o e teu fa'afaigaluega i se oloa e tu'ufa'atasia ai mea fou fa'asaienisi ma tomai fa'apitoa. Semicera o loʻo faʻaauau pea ona taʻitaʻia le alamanuia e ala i le tuʻuina atu o fofo e lagolagoina ai le atinaʻeina o tekonolosi semiconductor pito sili ona lata mai, faʻamautinoa le maualuga o le faʻatinoga ma le faʻamaoni.

Aitema

Gaosiga

Suesuega

Faafoliga

Fa'a tioata

Polytype

4H

Fa'asagaga i luga ole mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amamafa

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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