Semicera's 4 Inisi N-ituaiga SiC Substrates ua mamanuina ina ia ausia tulaga saʻo o le semiconductor alamanuia. O nei substrates e maua ai se faʻavae maualuga mo le tele o mea faʻaeletoroni faʻaogaina, e ofoina atu le faʻaogaina ma mea faʻavela.
O le N-type doping o nei SiC substrates e faʻaleleia ai le faʻaogaina o le eletise, ma faʻapitoa ai mo faʻaoga maualuga ma maualuga. O lenei meatotino e mafai ai mo le faʻaogaina lelei o masini e pei o diodes, transistors, ma amplifier, lea e taua tele ai le faʻaitiitia o le malosi.
E fa'aogaina e Semicera faiga fa'aonaponei fa'aonaponei ina ia fa'amautinoaina o lo'o fa'aalia e mea'ai ta'itasi le tulaga lelei ma le tutusa. O lenei sa'o e taua tele mo fa'aoga i le eletise eletise, masini microwave, ma isi tekinolosi e mana'omia ai le fa'atuatuaina fa'atinoga i lalo o tulaga ogaoga.
O le tu'ufa'atasia ole Semicera's N-type SiC substrates i lau gaosiga o lona uiga o le fa'amanuiaina mai mea e maua ai le sili atu o le vevela ma le fa'amautuina o le eletise. O nei substrates e lelei mo le fatuina o vaega e manaʻomia ai le tumau ma le lelei, e pei o le suiga o le eletise ma le RF amplifier.
E ala i le filifilia o Semicera's 4 Inch N-type SiC Substrates, o lo'o e teu fa'afaigaluega i se oloa e tu'ufa'atasia ai mea fou fa'asaienisi ma tomai fa'apitoa. Semicera o loʻo faʻaauau pea ona taʻitaʻia le alamanuia e ala i le tuʻuina atu o fofo e lagolagoina ai le atinaʻeina o tekonolosi semiconductor pito sili ona lata mai, faʻamautinoa le maualuga o le faʻatinoga ma le faʻamaoni.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Parata tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga o mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amama | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
