4 Inisi SiC Substrate N-ituaiga

Fa'amatalaga Puupuu:

Semicera e ofoina atu le tele o 4H-8H SiC wafers. Mo le tele o tausaga, sa avea i matou ma tagata gaosi oloa ma tuʻuina atu oloa i le semiconductor ma photovoltaic alamanuia. O a tatou oloa autu e aofia ai: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, faapea foi ma le CVD SiC coatings ma TaC coatings. E aofia ai le tele o maketi a Europa ma Amerika. Matou te tulimatai atu e avea ma au paaga umi i Saina.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Silicon carbide (SiC) mea tioata tasi o loʻo i ai le lautele o le va tele (~ Si 3 taimi), conductivity vevela maualuga (~ Si 3.3 taimi po o GaAs 10 taimi), maualuga electron saturation fua faatatau (~ Si 2.5 taimi), eletise malepe maualuga. fanua (~ Si 10 taimi po o GaAs 5 taimi) ma isi uiga mataʻina.

Semicera malosi e mafai ona tuʻuina atu i tagata faʻatau le tulaga maualuga Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; E le gata i lea, e mafai ona matou tuʻuina atu i tagata faʻatau i le tutusa ma le heterogeneous silicon carbide epitaxial sheets; E mafai foi ona matou faʻavasegaina le pepa epitaxial e tusa ai ma manaʻoga faʻapitoa o tagata faʻatau, ma e leai se faʻatonuga maualalo.

Aitema	Gaosiga	Suesuega	Faafoliga
Fa'a tioata
Polytype	4H
Fa'asagaga i luga o mea sese	<11-20 >4±0.15°
Fa'aeletise Parata
Fa'amama	n-ituaiga Nitrogen
Tete'e	0.015-0.025ohm·cm
Fa'ailoga Fa'ainisinia
Diamita	99.5 - 100mm
mafiafia	350±25 μm
Primary flat orientation	[1-100]±5°
Muamua mafolafola umi	32.5±1.5mm
Tulaga mafolafola lona lua	90° CW mai mafolafola muamua ±5°. fa'asaga i luga le silikoni
Lua mafolafola umi	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
punou	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
A'ai	≤20 μm	≤45 μm	≤50 μm
Luma(Si-foliga) talatala(AFM)	Ra≤0.2nm (5μm*5μm)
Fauga
Micropipe density	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Uamea eleelea	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Tulaga Luma
Luma	Si
Fa'ai'uga luga	Si-foliga CMP
fasimea	≤60ea/wafer (tele≥0.3μm)	NA
Masisi	≤2ea/mm. Fa'aputuga umi ≤Diamita	Fa'aputuga umi≤2*Diamita	NA
Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina	Leai		NA
Ta'otoga meataalo/indents/ gau/papa hex	Leai		NA
Polytype vaega	Leai	Vaega fa'aopoopo≤20%	Vaega fa'aopoopo≤30%
Faailoga leisa pito i luma	Leai
Tulaga Tulaga
Fa'ai'u tua	C-foliga CMP
Masisi	≤5ea/mm, Fa'aputuga umi≤2* Diamita	NA
faaletonu i tua	Leai
Tua talatala	Ra≤0.2nm (5μm*5μm)
Faailoga leisa tua	1 mm (mai le pito i luga)
pito
pito	Chamfer
afifiina
afifiina	O le ato totonu e fa'atumuina i le nitrogen ae fa'amama le ato fafo. Tele-wafer kaseti, epi-sauni.
*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.