4 Inisi SiC Substrate N-ituaiga

Fa'amatalaga Puupuu:

Semicera e ofoina atu le tele o 4H-8H SiC wafers. Mo le tele o tausaga, sa avea i matou ma tagata gaosi oloa ma tuʻuina atu oloa i le semiconductor ma photovoltaic alamanuia. O a tatou oloa autu e aofia ai: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, faapea foi ma le CVD SiC coatings ma TaC coatings. E aofia ai le tele o maketi a Europa ma Amerika. Matou te tulimatai atu e avea ma au paaga umi i Saina.

 

Fa'amatalaga Oloa

Faailoga o oloa

tech_1_2_size

Silicon carbide (SiC) mea tioata tasi o loʻo i ai le lautele o le va tele (~ Si 3 taimi), conductivity vevela maualuga (~ Si 3.3 taimi po o GaAs 10 taimi), maualuga electron saturation fua faatatau (~ Si 2.5 taimi), eletise malepe maualuga. fanua (~ Si 10 taimi po o GaAs 5 taimi) ma isi uiga mataʻina.

Semicera malosi e mafai ona tuʻuina atu i tagata faʻatau le tulaga maualuga Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; E le gata i lea, e mafai ona matou tuʻuina atu i tagata faʻatau i le tutusa ma le heterogeneous silicon carbide epitaxial sheets; E mafai foi ona matou faʻavasegaina le pepa epitaxial e tusa ai ma manaʻoga faʻapitoa o tagata faʻatau, ma e leai se faʻatonuga maualalo.

Aitema

Gaosiga

Suesuega

Faafoliga

Fa'a tioata

Polytype

4H

Fa'asagaga i luga ole mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amamafa

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

99.5 - 100mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

32.5±1.5mm

Tulaga mafolafola lona lua

90° CW mai mafolafola muamua ±5°. fa'asaga i luga le silikoni

Lua mafolafola umi

18±1.5mm

TTV

≤5 μm

≤10 μm

≤20 μm

LTV

≤2 μm(5mm*5mm)

≤5 μm(5mm*5mm)

NA

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤20 μm

≤45 μm

≤50 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

≤1 ea/cm2

≤5 ea/cm2

≤10 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤2ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

NA

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

O le ato totonu e fa'atumuina i le nitrogen ae fa'amama le ato fafo.

Tele-wafer kaseti, epi-sauni.

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

SiC wafers

Semicera Nofoaga faigaluega Semicera fale faigaluega 2 Meafaigaluega masini CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD O la matou tautua


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