41 vaega 4 inisi graphite faavae MOCVD meafaigaluega vaega

Fa'amatalaga Puupuu:

Fa'atomuaga o oloa ma fa'aoga: Tu'u 41 fasipepa o le 4 itula mea'ai, fa'aoga mo le fa'atupuina o le LED ma le ata lanumoana lanumeamata epitaxial.

Tulaga masini o le oloa: i totonu o le potu tali, faʻafesoʻotaʻi saʻo ma le wafer

O oloa autu pito i lalo: LED chips

Maketi pito autu: LED


Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

E saunia e le matou kamupaniSiC fa'apipi'iauaunaga faagasologa e ala CVD auala i luga o le graphite, ceramics ma isi mea, ina ia faʻapitoa kasa o loʻo i ai carbon ma silicon tali i le vevela maualuga e maua ai le mama maualuga SiC molelaula, molecules teuina i luga o le mea o loʻo ufiufi, fausia ai seSiC puipui puipui.

41 vaega 4 inisi graphite faavae MOCVD meafaigaluega vaega

Vaega Autu

1. maualuga le vevela oxidation tetee:
o loʻo lelei pea le faʻamaʻiina o le faʻamaʻi pe a maualuga le vevela e pei o le 1600 ℃.
2. Mamaa maualuga: faia e vailaau ausa tuu i lalo o le maualuga vevela tulaga chlorination.
3. Erosion tete'e: maualuga ma'a'a, fa'apipi'i luga, vaega laiti.
4. Tete'e a'a: acid, alkali, masima ma organic reagents.

 

Fa'amatalaga autu o le CVD-SIC Coating

SiC-CVD Meatotino
Fauga tioata FCC β vaega
Malosi g/cm ³ 3.21
Malosi Vickers maaa 2500
Tele o Saito μm 2~10
Vailaau Mama % 99.99995
Malosiaga vevela J·kg-1 ·K-1 640
Sulimation Temperature 2700
Malosi Felexural MPa (RT 4-point) 415
Young's Modulus Gpa (4pt pi'o, 1300℃) 430
Fa'alauteleina o le vevela (CTE) 10-6K-1 4.5
Fa'avevela vevela (W/mK) 300
Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
Semicera Faleoloa
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