4″ 6″ maualuga mama Semi-Insulating SiC Ingot

Fa'amatalaga Puupuu:

Semicera's 4”6” High Purity Semi-Insulating SiC Ingots o lo'o fa'ata'atia lelei mo fa'aoga fa'aeletonika ma optoelectronic. O lo'o fa'aalia ai le maualuga o le fa'avevelaina o le vevela ma le fa'afitia o le eletise, o nei ingots e maua ai se fa'avae malosi mo masini fa'atino maualuga. Semicera faʻamautinoa le lelei ma le faʻamaoni i oloa uma.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 4"6" High Purity Semi-Insulating SiC Ingots ua mamanuina ina ia ausia tulaga sa'o o le alamanuia semiconductor. O nei ingots e gaosia ma le taulaʻi i le mama ma le tumau, ma avea ai ma se filifiliga lelei mo le maualuga-mamana ma le maualuga-televave talosaga lea e sili ona taua le faatinoga.

O mea uiga ese o nei SiC ingots, e aofia ai le maualuga o le vevela ma le faʻamalosia o le eletise, e faʻapitoa ai mo le faʻaogaina i le eletise eletise ma masini microwave. O latou natura semi-insulating e mafai ai ona faʻamalo lelei le vevela ma faʻaitiitia le faʻalavelave eletise, e oʻo atu ai i vaega sili atu ona lelei ma faʻalagolago.

O lo'o fa'aaogaina e le Semicera faiga fa'aonaponei fa'aonaponei e gaosia ai atigipusa fa'atasi ai ma le tulaga lelei ma le tutusa. O lenei sa'o e fa'amautinoa ai e mafai ona fa'atuatuaina le fa'aogaina o ingot ta'itasi i fa'aoga ma'ale'ale, e pei o fa'amalo maualuga, laser diodes, ma isi masini optoelectronic.

E maua uma i le 4-inisi ma le 6-inisi lapopoa, Semicera's SiC ingots e maua ai le fetuutuunai manaʻomia mo fua eseese gaosiga ma manaʻoga faatekinolosi. Pe mo suʻesuʻega ma atinaʻe poʻo le gaosiga tele, o nei ingots e tuʻuina atu le faʻatinoga ma le tumau e manaʻomia e faiga faʻaonaponei faʻaeletoroni.

E ala i le filifilia o Semicera's High Purity Semi-Insulating SiC Ingots, o lo'o e teu fa'afaigaluega i se oloa e tu'ufa'atasia fa'asaienisi meafaitino maualuluga ma tomai fa'apitoa tau gaosiga. Semicera o loʻo tuʻufaʻatasia i le lagolagoina o le faʻafouina ma le tuputupu aʻe o le semiconductor alamanuia, ofoina atu mea e mafai ai le atinaʻeina o masini faʻaeletoroni faʻasolosolo.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

tech_1_2_size
SiC wafers

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