6-inisi LiNbO3 fa'amau fa'amau

Fa'amatalaga Puupuu:

Semicera's 6-inisi LiNbO3 wafer fusifusia e lelei mo faʻagasologa faʻapipiʻi faʻasolosolo i masini optoelectronic, MEMS, ma fesoʻotaʻiga tuʻufaʻatasia (ICs). Faʻatasi ai ma ona uiga faʻapipiʻi sili atu, e lelei mo le ausiaina o le faʻaogaina ma le tuʻufaʻatasia saʻo, faʻamautinoa le faʻatinoina ma le lelei o masini semiconductor. O le maualuga o le mama o le wafer e faʻaitiitia ai le faʻaleagaina, ma avea ai ma filifiliga faʻatuatuaina mo talosaga e manaʻomia ai le maualuga maualuga.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 6-inisi LiNbO3 Bonding Wafer ua fa'ainisinia e fa'amalieina tulaga fa'ata'atia o le semiconductor alamanuia, fa'aolaina fa'atinoga le mafaatusalia i su'esu'ega ma si'osi'omaga gaosiga. Pe mo optoelectronics maualuga, MEMS, poʻo le faʻapipiʻiina o semiconductor sili atu, o lenei faʻamau faʻapipiʻi e ofoina atu le faʻamaoni ma le umi e manaʻomia mo le atinaʻeina o tekonolosi.

I totonu o le semiconductor industry, o le 6-inch LiNbO3 Bonding Wafer e faʻaaogaina lautele mo le faʻapipiʻiina o laupepa manifinifi i masini optoelectronic, sensors, ma microelectromechanical system (MEMS). O ona meatotino tulaga ese ua avea ai ma vaega taua mo talosaga e manaʻomia ai le tuʻufaʻatasia saʻo, e pei o le fausiaina o fesoʻotaʻiga tuʻufaʻatasia (ICs) ma masini photonic. O le maualuga o le mama o le wafer e faʻamautinoa ai o le oloa mulimuli e faʻatumauina le faʻatinoga sili ona lelei, faʻaitiitia ai le lamatiaga o le faʻaleagaina lea e ono aʻafia ai le faʻatuatuaina o masini.

O mea tau vevela ma eletise ole LiNbO3
Liu liusuavai 1250 ℃
Curie vevela 1140 ℃
Fa'avevela vevela 38 W/m/K @ 25 ℃
Coefficient o le faalauteleina o le vevela (@ 25°C)

//a,2.0×10-6/K

//c,2.2×10-6/K

Tete'e 2×10-6Ω·cm @ 200 ℃
Dielectric tumau

εS11/ε0=43,εT11/ε0=78

εS33/ε0=28,εT33/ε0= 2

Piezoelectric tumau

D22=2.04×10-11C/N

D33=19.22×10-11C/N

Electro-optic coefficient

γT33=32 pm/V, γS33=31pm/V,

γT31=10 pm/V, γS31=8.6 pm/V,

γT22=6.8 pm/V, γS22=3.4 pm/V,

Afa-galu voltage, DC
Mala eletise // z, moli ⊥ Z;
Mala eletise // x po'o le y, moli ⊥ z

3.03 KV

4.02 KV

O le 6-inisi LiNbO3 Bonding Wafer mai Semicera ua fa'atulagaina fa'apitoa mo fa'aoga maualuga i le semiconductor ma optoelectronics alamanuia. E lauiloa i le maualuga o le ofuina o le ofuina, maualuga le mautu o le vevela, ma le mama tulaga ese, o lenei wafer faʻapipiʻi e lelei mo le gaosiga o semiconductor maualuga, ofoina atu le faʻatuatuaina umi ma le saʻo e oʻo lava i tulaga faigata.

Faia i tekinolosi fa'aonaponei, o le 6-inisi LiNbO3 Bonding Wafer e fa'amautinoa ai le la'ititi o le fa'aleagaina, lea e taua tele mo le gaosiga o le semiconductor e mana'omia ai le maualuga o le mama. O lona fa'amautu lelei fa'amama e mafai ai ona tatalia le maualuga o le vevela e aunoa ma le fa'afefeina o le fa'atulagaina o le fa'amaoni, ma avea ai ma filifiliga fa'atuatuaina mo fa'aoga fa'amauga maualuga. E le gata i lea, o le ofutino mata'ina le tete'e o la'ei fa'amautinoaina e fa'atino faifaipea i luga o le fa'aoga fa'alautele, maua ai le umi umi ma fa'aitiitia ai le mana'oga mo le sui soo.

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