6 Inisi N-ituaiga SiC Substrate

Silicon carbide (SiC) mea tioata tasi o loʻo i ai le lautele o le va tele (~ Si 3 taimi), conductivity vevela maualuga (~ Si 3.3 taimi po o GaAs 10 taimi), maualuga electron saturation fua faatatau (~ Si 2.5 taimi), eletise malepe maualuga. fanua (~ Si 10 taimi po o GaAs 5 taimi) ma isi uiga mataʻina.

O le vaega lona tolu o mea semiconductor e masani ona aofia ai SiC, GaN, taimane, ma isi, aua o lona lautele gap lautele (Eg) e sili atu pe tutusa ma le 2.3 electron volts (eV), e lauiloa foi o mea lautele gap semiconductor mea. Pe a faatusatusa i mea semiconductor augatupulaga muamua ma lona lua, o le lona tolu o augatupulaga semiconductor mea e maua ai le tulaga lelei o le conductivity vevela maualuga, fanua malepe eletise maualuga, maualuga saturated electron fua faatatau femalagaiga ma le malosi fusia maualuga, lea e mafai ona ausia manaoga fou o tekinolosi faaonaponei mo le maualuga. vevela, malosi maualuga, maualuga maualuga, maualuga taimi ma faʻavevela tetee ma isi tulaga faigata. O loʻo i ai faʻamoemoega faʻaoga taua i vaega o le puipuiga a le atunuʻu, vaʻalele, aerospace, suʻesuʻega suauʻu, teuina o mata, ma isi, ma e mafai ona faʻaitiitia le malosi o le malosi e sili atu i le 50% i le tele o pisinisi faʻapitoa e pei o fesoʻotaʻiga lautele, malosi o le la, gaosiga o taavale, moli semiconductor, ma smart grid, ma e mafai ona faaitiitia le tele o meafaigaluega e sili atu i le 75%, lea e taua tele mo le atinaeina o le faasaienisi ma tekinolosi tagata.

Semicera malosi e mafai ona tuʻuina atu i tagata faʻatau le tulaga maualuga Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; E le gata i lea, e mafai ona matou tuʻuina atu i tagata faʻatau i le tutusa ma le heterogeneous silicon carbide epitaxial sheets; E mafai foi ona matou faʻavasegaina le pepa epitaxial e tusa ai ma manaʻoga faʻapitoa o tagata faʻatau, ma e leai se faʻatonuga maualalo.