6 Inisi N-ituaiga SiC Wafer

Fa'amatalaga Puupuu:

Semicera's 6 Inch N-type SiC Wafer e ofoina atu le fa'aogaina o le vevela ma le malosi o le eletise maualuga, ma avea ai ma filifiliga sili atu mo le eletise ma masini RF. O lenei wafer, ua fa'atulagaina e fa'amalieina mana'oga a le alamanuia, fa'ata'ita'iina le tautinoga a Semicera i le lelei ma le fa'afouga i mea fa'aoga semiconductor.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 6 Inisi N-ituaiga SiC Wafer tu i luma o tekinolosi semiconductor. Fausia mo le fa'atinoga sili ona lelei, o lenei wafer e sili atu i le maualuga-mamana, maualuga-vave, ma fa'aoga maualuga-vevela, e mana'omia mo masini fa'aeletoroni fa'aeletonika.

O la matou 6 Inisi N-ituaiga SiC wafer e faʻaalia ai le maualuga o le eletise eletise ma le maualalo o le tetee, o mea taua ia mo masini eletise e pei o MOSFET, diodes, ma isi vaega. O nei meatotino e faʻamautinoa ai le lelei o le liua o le malosi ma faʻaitiitia le faʻatupuina o le vevela, faʻaleleia le faʻatinoga ma le ola o faiga faʻaeletoroni.

Ole faiga fa'atonutonu lelei ole Semicera e fa'amautinoa ai e fa'atumauina lelei mafolafola ta'i SiC ta'itasi ma fa'aletonu laiti. O lenei va'ai toto'a i fa'amatalaga e fa'amautinoa ai e fa'amalieina e a tatou mea'ai mea mana'omia mo alamanuia e pei o ta'avale, va'alele, ma feso'ota'iga.

I le faaopoopo atu i ana mea eletise sili atu, o le N-type SiC wafer e ofoina atu le malosi o le vevela ma le tetee atu i le maualuga o le vevela, ma faʻalelei ai mo siosiomaga e ono le manuia ai mea masani. O lenei gafatia e sili ona taua i faʻaoga e aofia ai faʻagaioiga maualuga ma maualuga le malosi.

E ala i le filifilia o Semicera's 6 Inch N-type SiC Wafer, o loʻo e teu faʻafaigaluega i se oloa e faʻatusalia le tumutumu o semiconductor innovation. Matou te tuuto atu i le tuʻuina atu o poloka faufale mo masini faʻapipiʻi, faʻamautinoa o loʻo maua e a matou paaga i pisinisi eseese mea sili ona lelei mo a latou faʻagasologa faatekinolosi.

Aitema

Gaosiga

Suesuega

Faafoliga

Fa'a tioata

Polytype

4H

Fa'asagaga i luga ole mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amamafa

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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