6 Inisi Semi-Insulating HPSI SiC Wafer

Fa'amatalaga Puupuu:

Semicera's 6 Inisi Semi-Insulating HPSI SiC Wafers ua fa'ainisinia mo le maualuga ma le fa'atuatuaina i mea fa'aeletonika maualuga. O nei wafers o loʻo faʻaalia ai mea e sili ona lelei le vevela ma le eletise, e faʻaogaina ai mo le tele o faʻaoga, e aofia ai masini eletise ma eletise eletise maualuga. Filifili Semicera mo le tulaga maualuga ma le fou.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 6 Inisi Semi-Insulating HPSI SiC Wafers ua mamanuina e faʻafetaui ai manaʻoga faigata o tekinolosi faʻaonaponei semiconductor. Faatasi ai ma le mama atoatoa ma le tumau, o nei wafers e avea o se faavae faatuatuaina mo le atinaʻeina o vaega eletise maualuga.

O nei HPSI SiC wafers ua lauiloa ona o latou faʻaogaina o le vevela ma le faʻaogaina o le eletise, lea e taua tele mo le faʻaleleia o le faʻatinoina o masini eletise ma taʻavale maualuga. Ole vaega ole semi-insulating e fesoasoani ile fa'aitiitia ole fa'alavelave eletise ma fa'ateleina le lelei ole masini.

O le tulaga maualuga o le gaosiga o gaosiga o lo'o fa'aogaina e Semicera e fa'amautinoaina ai e tofu lava le wafer ma le mafiafia tutusa ma le la'ititi o fa'aletonu. O lenei sa'o e mana'omia mo fa'aoga fa'apitoa e pei o masini fa'alava leitio, fa'aliliuga eletise, ma faiga fa'alelei, lea o le fa'atinoga ma le tumau o mea taua.

E ala i le fa'aogaina o faiga fa'aonaponei fa'aonaponei, e tu'uina atu ai e Semicera u'amea e le gata ina fa'amalieina ae sili atu i tulaga fa'apisinisi. O le 6-inisi le tele e ofoina atu le fetuutuunai i le faʻalauteleina o le gaosiga, faʻafeiloaʻi i suʻesuʻega ma faʻatauga faʻapisinisi i le vaega semiconductor.

Filifilia Semicera's 6 Inisi Semi-Insulating HPSI SiC Wafers o lona uiga o le teu fa'afaigaluegaina i se oloa e maua ai le tulaga lelei ma le fa'atinoga. O nei wafers o se vaega o le tautinoga a Semicera i le faʻalauteleina o agavaʻa o tekinolosi semiconductor e ala i mea fou ma tufuga faʻapitoa.

Aitema

Gaosiga

Suesuega

Faafoliga

Fa'a tioata

Polytype

4H

Fa'asagaga i luga ole mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amamafa

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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