8 lnch n-type Conductive SiC Substrate e maua ai le faatinoga e le mafaatusalia mo masini eletise eletise, e maua ai le lelei tele o le vevela, maualuga le malepelepe eletise ma le tulaga sili ona lelei mo talosaga semiconductor maualuga. Semicera e tu'uina atu fofo e ta'imua i alamanuia ma lona fa'ainisinia 8 lnch n-type Conductive SiC Substrate.
Semicera's 8 lnch n-type Conductive SiC Substrate ose mea pito sili ona lelei ua mamanuina e faʻafetaui ai le faʻatupulaia o manaʻoga o eletise eletise ma faʻaoga semiconductor maualuga. O le substrate e tu'ufa'atasia le lelei o le silicon carbide ma le n-type conductivity e tu'uina atu le fa'atusaina o fa'atinoga i masini e mana'omia ai le maualuga o le malosi, fa'amama lelei, ma le fa'amaoni.
Semicera's 8 lnch n-type Conductive SiC Substrate ua saunia ma le faaeteete ina ia mautinoa le maualuga ma le tumau. O lo'o fa'aalia ai le fa'aogaina lelei o le vevela mo le fa'amama lelei o le vevela, fa'apena lelei mo fa'aoga maualuga-malosi e pei o le eletise, diodes, ma transistors. E le gata i lea, o le eletise gau maualuga o lenei substrate e mautinoa e mafai ona tatalia tulaga faigata, maua ai se tulaga malosi mo mea tau eletise maualuga.
E iloa e Semicera le taua tele o le 8 lnch n-type Conductive SiC Substrate o loʻo faʻatinoina i le alualu i luma o tekinolosi semiconductor. O a matou mea'ai e gaosia e fa'aaoga ai faiga fa'aonaponei e fa'amautinoa ai le la'ititi o le fa'aletonu, e taua tele i le atina'eina o masini lelei. O lenei gauai atu i auiliiliga e mafai ai ona maua oloa e lagolagoina le gaosiga o isi augatupulaga eletise ma maualuga le faatinoga ma le tumau.
O la matou 8 lnch n-type Conductive SiC Substrate ua mamanuina foi e faʻafetaui manaʻoga o le tele o talosaga mai taʻavale i le malosi faʻafouina. N-type conductivity e maua ai mea eletise e manaʻomia e atiaʻe ai masini eletise lelei, ma avea ai lenei substrate ma vaega autu i le suiga i tekinolosi sili atu le malosi.
I Semicera, matou te tuuto atu i le tuʻuina atu o mea e faʻamalosia ai le faʻafouina i le gaosiga o semiconductor. O le 8 lnch n-type Conductive SiC Substrate o se faʻamaoniga o lo tatou faʻamaoni i le lelei ma le lelei, faʻamautinoa e maua e a tatou tagata faʻatau mea sili ona lelei mo a latou talosaga.
Fa'amaufa'ailoga autu
Tele | 8-inisi |
Diamita | 200.0mm+0mm/-0.2mm |
Fa'asagaga i luga | ese-axis:4° agai i le <1120>士0.5° |
Notch Orientation | <1100>士1° |
Notch Angle | 90°+5°/-1° |
Notch Deep | 1mm+0.25mm/-0mm |
Lua Flat | / |
mafiafia | 500.0士25.0um/350.0±25.0um |
Polytype | 4H |
Ituaiga Conductive | n-ituaiga |