8 inisi n-ituaiga Conductive SiC Substrate

Fa'amatalaga Puupuu:

8-inisi n-ituaiga SiC substrate o se silicon carbide silicon carbide (SiC) mafolafola tioata tasi ma le lautele e amata mai i le 195 i le 205 mm ma le mafiafia e amata mai le 300 i le 650 microns. O lenei mea'ai e iai le maualuga o le fa'aogaina o le doping ma le fa'amanino lelei o fa'amatalaga fa'atonuga, e maua ai le fa'atinoga lelei mo le tele o fa'aoga semiconductor.

 


Fa'amatalaga Oloa

Faailoga o oloa

8 lnch n-type Conductive SiC Substrate e maua ai le faatinoga e le mafaatusalia mo masini eletise eletise, e maua ai le lelei tele o le vevela, maualuga le malepelepe eletise ma le tulaga sili ona lelei mo talosaga semiconductor maualuga. Semicera e tu'uina atu fofo e ta'imua i alamanuia ma lona fa'ainisinia 8 lnch n-type Conductive SiC Substrate.

Semicera's 8 lnch n-type Conductive SiC Substrate ose mea pito sili ona lelei ua mamanuina e faʻafetaui ai le faʻatupulaia o manaʻoga o eletise eletise ma faʻaoga semiconductor maualuga. O le substrate e tu'ufa'atasia le lelei o le silicon carbide ma le n-type conductivity e tu'uina atu le fa'atusaina o fa'atinoga i masini e mana'omia ai le maualuga o le malosi, fa'amama lelei, ma le fa'amaoni.

Semicera's 8 lnch n-type Conductive SiC Substrate ua saunia ma le faaeteete ina ia mautinoa le maualuga ma le tumau. O lo'o fa'aalia ai le fa'aogaina lelei o le vevela mo le fa'amama lelei o le vevela, fa'apena lelei mo fa'aoga maualuga-malosi e pei o le eletise, diodes, ma transistors. E le gata i lea, o le eletise gau maualuga o lenei substrate e mautinoa e mafai ona tatalia tulaga faigata, maua ai se tulaga malosi mo mea tau eletise maualuga.

E iloa e Semicera le taua tele o le 8 lnch n-type Conductive SiC Substrate o loʻo faʻatinoina i le alualu i luma o tekinolosi semiconductor. O a matou mea'ai e gaosia e fa'aaoga ai faiga fa'aonaponei e fa'amautinoa ai le la'ititi o le fa'aletonu, e taua tele i le atina'eina o masini lelei. O lenei gauai atu i auiliiliga e mafai ai ona maua oloa e lagolagoina le gaosiga o isi augatupulaga eletise ma maualuga le faatinoga ma le tumau.

O la matou 8 lnch n-type Conductive SiC Substrate ua mamanuina foi e faʻafetaui manaʻoga o le tele o talosaga mai taʻavale i le malosi faʻafouina. N-type conductivity e maua ai mea eletise e manaʻomia e atiaʻe ai masini eletise lelei, ma avea ai lenei substrate ma vaega autu i le suiga i tekinolosi sili atu le malosi.

I Semicera, matou te tuuto atu i le tuʻuina atu o mea e faʻamalosia ai le faʻafouina i le gaosiga o semiconductor. O le 8 lnch n-type Conductive SiC Substrate o se faʻamaoniga o lo tatou faʻamaoni i le lelei ma le lelei, faʻamautinoa e maua e a tatou tagata faʻatau mea sili ona lelei mo a latou talosaga.

Fa'amaufa'ailoga autu

Tele 8-inisi
Diamita 200.0mm+0mm/-0.2mm
Fa'asagaga i luga ese-axis:4° agai i le <1120>士0.5°
Notch Orientation <1100>士1°
Notch Angle 90°+5°/-1°
Notch Deep 1mm+0.25mm/-0mm
Lua Flat /
mafiafia 500.0士25.0um/350.0±25.0um
Polytype 4H
Ituaiga Conductive n-ituaiga
8lnch n-ituaiga sic Substrate-2
SiC wafers

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