Silicon carbide(SiC) epitaxy
O le fata epitaxial, o loʻo taofia ai le SiC substrate mo le faʻatupuina o le SiC epitaxial slice, tuʻu i totonu o le potu tali ma faʻafesoʻotaʻi saʻo le wafer.
O le vaega pito i luga o le afa masina o se ave mo isi mea faʻaoga o le potu tali a Sic epitaxy meafaigaluega, ae o le vaega pito i lalo o le masina e fesoʻotaʻi i le quartz tube, faʻafeiloaʻi le kesi e tulia ai le faʻavae susceptor e sui. latou vevela-pulea ma faʻapipiʻi i le potu tali e aunoa ma le faʻafesoʻotaʻi tuusaʻo ma le wafer.
O le epitaxy
O le fata, o loʻo uuina le Si substrate mo le faʻatupuina o le Si epitaxial slice, tuʻu i totonu o le potu tali ma faʻafesoʻotaʻi saʻo le wafer.
O le mama preheating o loʻo i luga o le mama pito i fafo o le Si epitaxial substrate tray ma faʻaaogaina mo le faʻavasegaina ma le faʻamafanafanaina. E tu'u i totonu o le potu tali ma e le fa'afeso'ota'i sa'o i le wafer.
O se susceptor epitaxial, lea e taofia ai le Si substrate mo le totoina o se fasi epitaxial Si, tuu i totonu o le potu tali ma faʻafesoʻotaʻi saʻo le wafer.
Epitaxial barrel o vaega autu ia o loʻo faʻaaogaina i le tele o faiga o gaosiga semiconductor, e masani ona faʻaaogaina i masini MOCVD, faʻatasi ai ma le faʻamautu lelei o le vevela, faʻamaʻi vailaʻau ma le faʻaogaina o mea, e fetaui lelei mo le faʻaaogaina i le maualuga o le vevela. E fa'afeso'ota'i ma apa.
| Mea fa'aletino o le Silicon Carbide ua toe fa'akrista | |
| Meatotino | Taua masani |
| vevela galue (°C) | 1600°C (faatasi ai ma le okesene), 1700°C (faaitiitia le siosiomaga) |
| SiC anotusi | > 99.96% |
| Free Si anotusi | <0.1% |
| Fa'atosina tele | 2.60-2.70 g/cm3 |
| E aliali mai le porosity | <16% |
| Malosi fa'amalosi | > 600 MPa |
| Malosi punou malulu | 80-90 MPa (20°C) |
| Malosi o le punou vevela | 90-100 MPa (1400°C) |
| Fa'ateleina le vevela @1500°C | 4.70 10-6/°C |
| Fa'avevela vevela @1200°C | 23 W/m•K |
| Fa'aula'i fa'alava | 240 GPa |
| Tete'e te'i vevela | Lelei tele |
| Mea fa'aletino ole Sintered Silicon Carbide | |
| Meatotino | Taua masani |
| Fa'asu'esu'ega o vaila'au | SiC>95%, Si<5% |
| Ole tele ole Density | >3.07 g/cm³ |
| E aliali mai le porosity | <0.1% |
| Modulus o le malepelepe ile 20℃ | 270 MPa |
| Modulus o le malepelepe ile 1200℃ | 290 MPa |
| Malosi ile 20℃ | 2400 Kilokalama/mm² |
| Malosi gau i le 20% | 3.3 MPa · m1/2 |
| Conductivity vevela ile 1200℃ | 45 w/m .K |
| Fa'alauteleina le vevela ile 20-1200℃ | 4.5 1 ×10 -6/℃ |
| Max.working vevela | 1400 ℃ |
| Tete'e te'i vevela ile 1200℃ | Lelei |
| Mea fa'aletino autu o ata CVD SiC | |
| Meatotino | Taua masani |
| Fauga tioata | FCC β vaega polycrystalline, tele (111) fa'atatau |
| Malosi | 3.21 g/cm³ |
| Malosi 2500 | (500g uta) |
| Tele o Saito | 2~10μm |
| Vailaau Mama | 99.99995% |
| Malosiaga vevela | 640 J·kg-1·K-1 |
| Sulimation Temperature | 2700 ℃ |
| Malosi Fa'asusu | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt pi'o, 1300 ℃ |
| Amioga vevela | 300W·m-1·K-1 |
| Fa'alauteleina o le vevela(CTE) | 4.5×10-6 K -1 |
Vaega autu
O le pito i luga e mafiafia ma leai ni pores.
Le mama maualuga, le atoatoa o mea le mama <20ppm, lelei le ea.
O le maualuga o le vevela, faʻateleina le malosi i le faʻaaogaina o le vevela, e oʻo atu i le maualuga maualuga i le 2750 ℃, sublimation i le 3600 ℃.
Maualalo fa'alelei modulus, maualuga le vevela conductivity, maualalo fa'aluma fa'aputu fa'alautele, ma sili tete'e te'i vevela.
Lelei mautu kemisi, tetee i acid, alkali, masima, ma reagents organic, ma e leai sona aafiaga i uʻamea uʻamea, slag, ma isi ala o faasalalauga corrosive. E le faʻamaʻiina tele i le ea i lalo ole 400 C, ma o le faʻamaʻi faʻamaʻi e matua faateleina i le 800 ℃.
A aunoa ma le tu'uina atu o so'o se kesi i le maualuga o le vevela, e mafai ona fa'atumauina le gaogao o le 10-7mmHg ile 1800°C.
Fa'aoga oloa
Li'u fa'afefete mo le fa'asao i totonu o alamanuia semiconductor.
Faitotoa paipa eletise malosi maualuga.
O le pulumu e fa'afeso'ota'i ai le fa'atonu eletise.
Graphite monochromator mo X-ray ma neutron.
Eseese foliga o graphite substrates ma atomic absorption tube coating.
Pyrolytic carbon coating aafiaga i lalo ole 500X microscope, faʻatasi ma faʻamaufaʻailoga luga.
TaC coating o le tupulaga fou e maualuga le vevela mea, ma sili atu le mautu maualuga maualuga nai lo SiC. I le avea ai o se faʻapipiʻi faʻafefete, ufiufi faʻamaʻi faʻamaʻi ma faʻaofuofu faʻafefete, e mafai ona faʻaaogaina i le siʻosiʻomaga i luga aʻe o le 2000C, faʻaaogaina lautele i le aerospace ultra-maualuga vevela vaega pito vevela, o le lona tolu o augatupulaga semiconductor fanua tuputupu ae tioata tasi.
| Mea fa'aletino ole fa'alavalava TaC | |
| Malosi | 14.3 (g/cm3) |
| Emisi fa'apitoa | 0.3 |
| Coefficient fa'alauteleina vevela | 6.3 10/K |
| Malosi (HK) | 2000 HK |
| Tete'e | 1x10-5 Ohm*cm |
| Tulaga mafanafana | <2500℃ |
| Suiga le tele o le kalafi | -10~-20um |
| Ufiufi mafiafia | ≥220um tau masani (35um±10um) |
O vaega mautu CVD SILICON CARBIDE ua lauiloa o le filifiliga muamua mo mama RTP / EPI ma faʻavae ma vaega o loʻo faʻaogaina le plasma etch cavity o loʻo faʻaogaina i le maualuga o le manaʻomia o le vevela (> 1500 ° C), o manaʻoga mo le mama e sili ona maualuga (> 99.9995%). ma o le faatinoga e sili ona lelei pe a maualuga le maualuga o vailaʻau e tetee atu ai. O nei mea e le o iai ni vaega lona lua i le pito o saito, o lea la o vaega ia e maua ai ni vaega laiti nai lo isi mea. E le gata i lea, o nei vaega e mafai ona faʻamamaina e faʻaaoga ai le HF / HCI vevela ma sina faʻaleagaina, e mafua ai le itiiti ifo o vaega ma le umi o le auaunaga.
