Epitaxy Reactor System fa'a'ave'esea

Fa'amatalaga Puupuu:

Semicera o lo'o ofoina atu le tele o susceptors ma vaega graphite ua fuafuaina mo le tele o epitaxy reactors.

E ala i faiga fa'apa'aga fa'atasi ma OEM e ta'ita'ia i alamanuia, tomai fa'apitoa o meafaitino, ma agava'a gaosiga fa'asilisili, e tu'uina atu e Semicera ni mamanu fa'apitoa e fa'amalieina mana'oga fa'apitoa o lau talosaga. O la matou tautinoga i le tulaga lelei e faʻamautinoa ai e te mauaina ni fofo sili ona lelei mo ou manaʻoga epitaxy reactor.

 

 


Fa'amatalaga Oloa

Faailoga o oloa

E saunia e le matou kamupaniSiC fa'apipi'iauaunaga faagasologa i luga o le graphite, ceramics ma isi mea e ala i le auala CVD, ina ia mafai ona gaoioi kasa faapitoa o loʻo i ai carbon ma silicon i le vevela maualuga e maua ai le mama mole Sic maualuga, lea e mafai ona teuina i luga o luga o mea ufiufi e fausia ai seSiC puipui puipuimo ituaiga paelo hy pnotic.

 

Vaega autu:

1 .High mama SiC ufiufi graphite

2. Tete'e vevela sili & tutusa vevela

3. LeleiSiC ua ufiufi tioatamo se mea lamolemole

4. Maumau maualuga e faasaga i le faamamaina o vailaau

 
Epitaxy fa'a'ave'esea (LPE) Reactor System

Fa'amatalaga Autu oFa'apipi'i CVD-SIC

SiC-CVD Meatotino

Fauga tioata FCC β vaega
Malosi g/cm ³ 3.21
Malosi Vickers maaa 2500
Tele o Saito μm 2~10
Vailaau Mama % 99.99995
Malosiaga vevela J·kg-1 ·K-1 640
Sulimation Temperature 2700
Malosi Felexural MPa (RT 4-point) 415
Young's Modulus Gpa (4pt pi'o, 1300℃) 430
Fa'alauteleina o le vevela (CTE) 10-6K-1 4.5
Fa'avevela vevela (W/mK) 300

 

 
2--cvd-sic-mama---99-99995-_60366
5----sic-crystal_242127
Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
O la matou tautua

  • Muamua:
  • Sosoo ai: