Fa'amatalaga
Le Graphite Susceptor maSilicon Carbide fa'apipi'i,6 fasi6 inisi wafer Carriermai le semicera e ofoina atu le tumau fa'apitoa ma le fa'avevelaina o le vevela mo le fa'atinoina o le fa'atupulaia o le epitaxial. Semicera fa'apitoa i susceptors fa'atupuina e fa'aleleia faiga fa'apeiO le EpitaxymaSiC Epitaxy, faʻamautinoa le faʻatuatuaina o le faʻatinoga i totonu o siosiomaga semiconductor faigata.
O lenei susceptor ua fa'ainisinia fa'apitoa mo le fa'aogainaMOCVD Susceptorfaiga ma ofo atu le fetaui ma felauaiga eseese e pei ole PSS Etching Carrier, ICP Etching Carrier, ma le RTP Carrier. E fetaui lelei mo le gaosiga o le Monocrystalline Silicon ma le LED Epitaxial Susceptor setups, e ofoina atu le faʻaogaina i fetuunaiga eseese, e aofia ai le Barrel Susceptor ma Pancake Susceptor designs.
O le Graphite Susceptor ma le Silicon Carbide Coating e lagolagoina foʻi talosaga i le vaega o le malosi o le la e ala i lona tuʻufaʻatasia ma Vaega Photovoltaic ma sili atu i GaN i faiga SiC Epitaxy. O lona 6-inisi le gafatia o le va'ava'a e fa'amautinoa ai le maualuga o le gaosiga, ma avea o se meafaigaluega taua mo tagata gaosi oloa i semiconductor ma photovoltaic alamanuia.
Vaega Autu
1 .High mama SiC ufiufi graphite
2. Tete'e vevela sili & tutusa vevela
3. LeleiSiC ua ufiufi tioatamo se mea lamolemole
4. Maumau maualuga e faasaga i le faamamaina o vailaau
Fa'amatalaga autu o le CVD-SIC Coatings:
SiC-CVD | ||
Malosi | (g/cc) | 3.21 |
Malosi fa'apa'u | (Mpa) | 470 |
Fa'alauteleina o le vevela | (10-6/K) | 4 |
Fa'avevela vevela | (W/mK) | 300 |
afifiina ma uta
Avanoa Avanoa:
10000 Piece/Pieces i le masina
afifiina ma Tiliva:
Fa'aputuina: Fa'auma ma Malosi
Poly taga + Pusa + Pusa + Pusa
Taulaga:
Ningbo/Shenzhen/Shanghai
Taimi muamua:
Aofa'i (Isi) | 1-1000 | >1000 |
Est. Taimi(aso) | 30 | Ia feutagai |