Graphite Susceptor ma Silicon Carbide Coating, 6 fasi 6 inisi wafer Carrier

Fa'amatalaga Puupuu:

O le Semicera Energy e ofoina atu le tele o susceptors ma vaega graphite ua fuafuaina mo reactors epitaxy eseese.

E ala i faiga fa'apa'aga fa'atasi ma OEM e ta'ita'ia i alamanuia, tomai fa'apitoa o meafaitino, ma agava'a fa'agaioiga maualuluga, e tu'uina atu e Semicera Energy ni fa'ata'ita'iga fa'atatau e fetaui ma mana'oga fa'apitoa o lau talosaga. O la matou tautinoga i le tulaga lelei e faʻamautinoa ai e te mauaina ni fofo sili ona lelei mo ou manaʻoga epitaxy reactor.


Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

Le Graphite Susceptor maSilicon Carbide fa'apipi'i,6 fasi6 inisi wafer Carriermai le semicera e ofoina atu le tumau fa'apitoa ma le fa'avevelaina o le vevela mo le fa'atinoina o le fa'atupulaia o le epitaxial. Semicera fa'apitoa i susceptors fa'atupuina e fa'aleleia faiga fa'apeiO le EpitaxymaSiC Epitaxy, faʻamautinoa le faʻatuatuaina o le faʻatinoga i totonu o siosiomaga semiconductor faigata.

O lenei susceptor ua fa'ainisinia fa'apitoa mo le fa'aogainaMOCVD Susceptorfaiga ma ofo atu le fetaui ma felauaiga eseese e pei ole PSS Etching Carrier, ICP Etching Carrier, ma le RTP Carrier. E fetaui lelei mo le gaosiga o le Monocrystalline Silicon ma le LED Epitaxial Susceptor setups, e ofoina atu le faʻaogaina i fetuunaiga eseese, e aofia ai le Barrel Susceptor ma Pancake Susceptor designs.

O le Graphite Susceptor ma le Silicon Carbide Coating e lagolagoina foʻi talosaga i le vaega o le malosi o le la e ala i lona tuʻufaʻatasia ma Vaega Photovoltaic ma sili atu i GaN i faiga SiC Epitaxy. O lona 6-inisi le gafatia o le va'ava'a e fa'amautinoa ai le maualuga o le gaosiga, ma avea o se meafaigaluega taua mo tagata gaosi oloa i semiconductor ma photovoltaic alamanuia.

 

Vaega Autu

1 .High mama SiC ufiufi graphite

2. Tete'e vevela sili & tutusa vevela

3. LeleiSiC ua ufiufi tioatamo se mea lamolemole

4. Maumau maualuga e faasaga i le faamamaina o vailaau

 

Fa'amatalaga autu o le CVD-SIC Coatings:

SiC-CVD
Malosi (g/cc) 3.21
Malosi fa'apa'u (Mpa) 470
Fa'alauteleina o le vevela (10-6/K) 4
Fa'avevela vevela (W/mK) 300

afifiina ma uta

Avanoa Avanoa:
10000 Piece/Pieces i le masina
afifiina ma Tiliva:
Fa'aputuina: Fa'auma ma Malosi
Poly taga + Pusa + Pusa + Pusa
Taulaga:
Ningbo/Shenzhen/Shanghai
Taimi muamua:

Aofa'i (Isi)

1-1000

>1000

Est. Taimi(aso) 30 Ia feutagai
Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
Semicera Faleoloa
O la matou tautua

  • Muamua:
  • Sosoo ai: