SiC Carrier/Susceptor maualuga mama

Ole mama maualuga SiC Carrier/Susceptor Ata Fa'aalia

Fa'amatalaga Puupuu:

Silicon carbide tauaveina tisiki ua lauiloa foi o le SIC fata, tisiki etching tisiki carbide, tisiki etching ICP. Silicon carbide fata mo LED etching (SiC tray) φ600mm o se fesoasoani faʻapitoa mo etching silicon loloto (ICP etching masini).

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

Silicon carbide ceramics o loʻo i ai mea faʻainisinia sili ona lelei i le vevela o le potu, e pei o le maualuga o le malosi, maualuga le maaa, maualuga elastic modulus, ma isi mea, e iai foʻi le maualuga o le maualuga o le vevela e pei o le maualuga o le vevela, le faʻalauteleina o le vevela, ma le faʻamaʻa lelei ma le mata. galuega faatino.
E sili ona fetaui lelei mo le gaosia o vaega sima sa'o mo masini fa'apipi'i tu'ufa'atasia e pei o masini lithography, e masani ona fa'aaogaina e gaosia ai le SiC carrier/susceptor, SiC wafer va'a, susu tisiki, vai malulu ipu, sa'o fua fa'afoma'i, grating ma isi sima fausaga vaega.

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Tulaga lelei

Tete'e maualuga vevela: fa'aoga masani ile 1800 ℃
Fa'avevela vevela maualuga: e tutusa ma mea fa'akalafi
Malosi maualuga: malo lona lua i taimane, boron nitride
Teteʻe faʻamaʻi: malosi malosi ma alkali e leai se pala, e sili atu le teteʻe o le corrosion nai lo tungsten carbide ma alumina.
Mamafa mama: maualalo le mamafa, latalata ile alumini
Leai se deformation: maualalo coefficient o le faalauteleina vevela
Tete'e te'i vevela: e mafai ona tatalia suiga mata'utia vevela, tete'e te'i vevela, ma e mautu le faatinoga
Silicon carbide carrier e pei o sic etching carrier, ICP etching susceptor, e masani ona faʻaaogaina i le semiconductor CVD, vacuum sputtering ma isi.

Tulaga lelei

Meatotino	Taua	Metotia
Malosi	3.21 g/cc	Sink-opeopea ma le fua
vevela faapitoa	0.66 J/g °K	Emo leisa fa'amalo
Malosi fa'apa'u	450 MPa 560 MPa	4 mata pi'o, RT4 mata pi'o, 1300°
Malosi gau	2.94 MPa m1/2	Microindentation
Malosi	2800	Vicker's, 500g uta
Elastic ModulusYoung's Modulus	450 GPa430 GPa	4 pt pi'o, RT4 pt pi'o, 1300 °C
Tele o saito	2 – 10 µm	SEM

Fa'amatalaga a le Kamupani

O le WeiTai Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa semiconductor ceramics ma e na'o le pau lea o le gaosiga i Saina e mafai ona tu'uina atu i le taimi e tasi le sima carbide silicon mama (aemaise le Recrystallized SiC) ma le CVD SiC coating. E le gata i lea, o loʻo tuʻuina atu foi la matou kamupani i fanua sima e pei o alumina, alumini nitride, zirconia, ma silicon nitride, ma isi.

O a tatou oloa autu e aofia ai: silicon carbide etching disc, silicon carbide tow va'a, silicon carbide wafer va'a (Photovoltaic & Semiconductor), silicon carbide ogaumu paipa, silicon carbide cantilever foe, silicon carbide chucks, silicon carbide beam, faapea foi ma le CVD SiC coating ma le TaC ufiufi. O oloa e masani ona faʻaaogaina i le semiconductor ma photovoltaic alamanuia, e pei o meafaigaluega mo le tuputupu aʻe tioata, epitaxy, etching, afifiina, ufiufi ma faʻasalalauga ogaumu, ma isi.
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