Tulaga maualuga MOCVD Substrate Heater

Fa'ata'ita'i Ata Fa'ailoaina le Fa'avevela o le Substrate MOCVD

Fa'amatalaga Puupuu:

Semicera Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa fa'apitoa i mea fa'atau ma semiconductor fa'atau.Matou te tuuto atu i le tuʻuina atu o oloa maualuga, faʻatuatuaina, ma fou i le gaosiga o semiconductor,alamanuia photovoltaicma isi matā'upu fa'atatau.

O la matou laina oloa e aofia ai SiC / TaC faʻapipiʻiina oloa graphite ma oloa sima, e aofia ai mea eseese e pei o le silicon carbide, silicon nitride, ma le alumini oxide ma isi.

I le avea ai o se tagata faʻalagolago, matou te malamalama i le taua o mea faʻaaogaina i le gaosiga o gaosiga, ma matou te tuuto atu i le tuʻuina atu o oloa e fetaui ma tulaga sili ona lelei e faʻamalieina ai manaʻoga o matou tagata faʻatau.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Autu autu ole fa'avevela graphite:

1. tutusa o fausaga faamafanafana.

2. conductivity lelei eletise ma le mamafa eletise maualuga.

3. tete'e corrosion.

4. inoxidizability.

5. mama maualuga kemikolo.

6. malosi faʻainisinia maualuga.

O le lelei o le malosi lelei, maualuga le tau ma maualalo le tausiga. E mafai ona tatou gaosia le anti-oxidation ma le umi o le ola o le graphite crucible, graphite mold ma vaega uma o le graphite heater.

Fa'amaufa'ailoga autu ole fa'avevela graphite

Fa'amatalaga Fa'apitoa	VET-M3
To'atele (g/cm3)	≥1.85
Fuafua (PPM)	≤500
Maaa o le matafaga	≥45
Fa'ate'e Fa'apitoa (μ.Ω.m)	≤12
Malosi fa'afoliga (Mpa)	≥40
Malosi fa'amalosi (Mpa)	≥70
Max. Tele o Saito (μm)	≤43
Coefficient o le fa'alauteleina o le vevela Mm/°C	≤4.4*10-6