LiNbO3 Wafer fusifusia

Fa'amatalaga Puupuu:

Lithium niobate tioata e sili ona lelei electro-optical, acousto-optical, piezoelectric, ma nonlinear meatotino. Lithium niobate tioata o se tioata multifunctional taua ma lelei nonlinear opitika meatotino ma se tele nonlinear opitika coefficient; e mafai fo'i ona ausia le fa'afetauiga o vaega e le fa'atauaina. I le avea ai o se tioata electro-optical, ua faʻaaogaina e avea o se mea taua faʻataʻitaʻi faʻafefe; e pei o se tioata piezoelectric, e mafai ona faʻaaogaina e fai ai le vaeluaga ma le maualalo o vaʻaiga vaʻaia SAW filiga, maualuga-mana maualuga-temperature resistant ultrasonic transducers, ma isi Doped lithium niobate mea e faʻaaogaina lautele foi.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Semicera's LiNbO3 Bonding Wafer ua mamanuina e faʻafetaui ai manaʻoga maualuga o le gaosiga o semiconductor. Faatasi ai ma ona meatotino tulaga ese, e aofia ai le sili atu o le faʻaogaina o le ofuina, maualuga maualuga le mafanafana, ma le mama mataʻina, o lenei wafer e lelei mo le faʻaogaina i talosaga e manaʻomia ai le saʻo ma le umi o le faʻatinoga.

I totonu o pisinisi semiconductor, LiNbO3 Bonding Wafers e masani ona faʻaaogaina mo le faʻapipiʻiina o mea manifinifi i masini optoelectronic, sensors, ma ICs maualuga. E taua tele i latou i photonics ma MEMS (Micro-Electromechanical Systems) ona o latou mea sili ona lelei dielectric ma gafatia e faʻasaga i tulaga faʻaogaina faigata. Semicera's LiNbO3 Bonding Wafer ua fa'ainisinia e lagolago ai le fa'apipi'i sa'o, fa'aleleia le fa'atinoga atoa ma le fa'amaoni o masini semiconductor.

O mea tau vevela ma eletise ole LiNbO3
Liu liusuavai	1250 ℃
Curie vevela	1140 ℃
Fa'avevela vevela	38 W/m/K @ 25 ℃
Coefficient o le faalauteleina o le vevela (@ 25°C)	//a，2.0×10^-6/K //c，2.2×10^-6/K
Tete'e	2×10^-6Ω·cm @ 200 ℃
Dielectric tumau	εS11/ε0=43，εT11/ε0=78 εS33/ε0=28，εT33/ε0= 2
Piezoelectric tumau	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Electro-optic coefficient	γT₃₃=32 pm/V， γS₃₃=31pm/V， γT₃₁=10 pm/V， γS₃₁=8.6 pm/V， γT₂₂=6.8 pm/V， γS₂₂=3.4 pm/V，
Afa-galu voltage, DC Mala eletise // z, moli ⊥ Z; Mala eletise // x po'o le y, moli ⊥ z	3.03 KV 4.02 KV

Fausia i le faʻaaogaina o mea e sili ona lelei, o le LiNbO3 Bonding Wafer e faʻamautinoa le faʻamaoni tumau e tusa lava pe i lalo o tulaga ogaoga. O le maualuga o le faʻamautu o le vevela e faʻapitoa ai mo siosiomaga e aofia ai le maualuga o le vevela, e pei o mea o loʻo maua i faiga epitaxy semiconductor. E le gata i lea, o le mama maualuga o le wafer e mautinoa ai le laʻititi o le faʻaleagaina, ma avea ai ma filifiliga faʻalagolago mo faʻaoga semiconductor taua.

I Semicera, matou te tuuto atu i le tuʻuina atu o faʻafitauli tau pisinisi. O la matou LiNbO3 Bonding Wafer e tuʻuina atu le tumau e le mafaatusalia ma le maualuga o le faʻatinoina o gafatia mo talosaga e manaʻomia ai le mama maualuga, teteʻe o laei, ma le mautu o le vevela. Pe mo le gaosiga o semiconductor alualu i luma poʻo isi tekinolosi faʻapitoa, o lenei wafer e avea o se vaega taua mo le gaosiga o masini.