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Low MOQ mo Silicon Carbide Sic Heating Elements mo ogaumu eletise

Low MOQ mo Silicon Carbide Sic Heating Elemene mo ogaumu Eletise Fa'aalia Ata
  • Low MOQ mo Silicon Carbide Sic Heating Elements mo ogaumu eletise

Fa'amatalaga Puupuu:

Semicera Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa semiconductor ceramics ma e na o le pau lea o le gaosiga i Saina e mafai ona tu'uina atu i le taimi lava e tasi le mama silicon carbide ceramic (aemaise lava leToe fa'a'aisa SiC) ma le CVD SiC coating. E le gata i lea, o loʻo tuʻuina atu foi la matou kamupani i fanua sima e pei o alumina, alumini nitride, zirconia, ma silicon nitride, ma isi.

 

Fa'amatalaga Oloa

Faailoga o oloa

Ua i ai nei a matou masini faʻapitoa. O a matou oloa o loʻo faʻatau atu i Amerika, Peretania ma isi, fiafia i se talaaga lelei i le va o tagata faʻatau mo Low MOQ mo Silicon Carbide Sic Heating Elements mo le umu Eletise, matou te vaʻavaʻai atu i le fausiaina o faʻalapotopotoga faʻapisinisi faʻatasi ma oe. E matua talisapaia au iloiloga ma fautuaga.
Ua i ai nei a matou masini faʻapitoa. O a matou oloa e auina atu i fafo i Amerika, Peretania ma isi, fiafia i se igoa lelei i tagata faʻatau moElemene Faamafanafana Saina Sic ma Elemene Faamafanafana Silicon Carbide, O la matou 'au e iloa lelei manaoga o maketi i atunuu eseese, ma e mafai ona tuʻuina atu oloa lelei talafeagai i tau sili ona lelei i maketi eseese. Ua uma ona faʻatūina e le matou kamupani se 'au faʻapitoa, fatufatuaʻi ma faʻamoemoe e atiaʻe tagata faʻatau ma le multi-win principle.

Autu autu ole fa'avevela graphite:

1. tutusa o fausaga faamafanafana.

2. conductivity lelei eletise ma le mamafa eletise maualuga.

3. tete'e corrosion.

4. inoxidizability.

5. mama maualuga kemikolo.

6. malosi faʻainisinia maualuga.

O le lelei o le malosi lelei, maualuga le tau ma maualalo le tausiga. E mafai ona tatou gaosia le anti-oxidation ma le umi o le ola o le graphite crucible, graphite mold ma vaega uma o le graphite heater.

Fa'avevela kafi (1)(1)

Fa'amaufa'ailoga autu ole fa'avevela graphite

Fa'amatalaga Fa'apitoa

Semicera-M3

To'atele (g/cm3)

≥1.85

Fuafua (PPM)

≤500

Maaa o le matafaga

≥45

Fa'ate'e Fa'apitoa (μ.Ω.m)

≤12

Malosi fa'afoliga (Mpa)

≥40

Malosi fa'amalosi (Mpa)

≥70

Max. Tele o Saito (μm)

≤43

Coefficient o le fa'alauteleina o le vevela Mm/°C

≤4.4*10-6

Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
O la matou tautua

Ua i ai nei a matou masini faʻapitoa. O a matou oloa o loʻo faʻatau atu i Amerika, Peretania ma isi, fiafia i se talaaga lelei i le va o tagata faʻatau mo Low MOQ mo Silicon Carbide Sic Heating Elements mo le umu Eletise, matou te vaʻavaʻai atu i le fausiaina o faʻalapotopotoga faʻapisinisi faʻatasi ma oe. E matua talisapaia au iloiloga ma fautuaga.
MOQ maualalo moElemene Faamafanafana Saina Sic ma Elemene Faamafanafana Silicon Carbide, O la matou 'au e iloa lelei manaoga o maketi i atunuu eseese, ma e mafai ona tuʻuina atu oloa lelei talafeagai i tau sili ona lelei i maketi eseese. Ua uma ona faʻatūina e le matou kamupani se 'au faʻapitoa, fatufatuaʻi ma faʻamoemoe e atiaʻe tagata faʻatau ma le multi-win principle.

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