Semiconductors:
O le semiconductor alamanuia e mulimuli i le tulafono tau alamanuia o le "tasi augatupulaga o tekinolosi, tasi le augatupulaga o le faagasologa, ma le tasi augatupulaga o meafaigaluega", ma le faaleleia ma le faʻaogaina o masini semiconductor e faʻalagolago tele i le faʻaogaina o tekonolosi o vaega saʻo. Faatasi ai ma i latou, saʻo vaega sima o mea sili ona sui semiconductor vaega saʻo vaega, o loʻo i ai faʻaoga taua i se faʻasologa o fesoʻotaʻiga gaosiga semiconductor tetele e pei o le vailaʻau vailaʻau, faʻaogaina o le tino, faʻapipiʻiina o ion, ma le faʻapipiʻiina. E pei o bearings, taʻiala taʻiala, linings, electrostatic chucks, masini faʻaaogaina lima, ma isi. Ae maise lava i totonu o le masini meafaigaluega, e taʻalo le matafaioi o le lagolago, puipuiga, ma le faʻafefe.
Talu mai le 2023, o Netherlands ma Iapani na faʻasolosolo ona tuʻuina atu tulafono fou poʻo tulafono fefaʻatauaʻiga i fafo i le puleaina, faʻaopoopoina tulafono faʻaulufaleina laisene mo masini semiconductor e aofia ai masini lithography, ma le tulaga o le semiconductor anti-globalization ua faasolosolo malie ona aliaʻe. O le taua o le pulea tuto'atasi o le sapalai sapalai ua fa'atupula'ia. I le feagai ai ma le manaʻoga mo le faʻaogaina o vaega o meafaigaluega semiconductor, o loʻo faʻamalosia e kamupani i totonu o le atunuʻu le atinaʻeina o pisinisi. Ua iloa e Zhongci Electronics le fa'aogaina o vaega fa'atekonolosi maualuga e pei o le fa'amafanafanaina o ipu ma le eletise eletise, foia le fa'afitauli o le "bottleneck" o le fale gaosi oloa semiconductor; Dezhi New Materials, o se taʻutaʻua i totonu o le atunuʻu o loʻo tuʻuina atu SiC faʻapipiʻiina graphite faʻavae ma SiC etching rings, ua faʻamaeʻaina lelei le faʻatupeina o le 100 miliona yuan, ma isi ... ..
Su'ega sima nitride silicon conductivity maualuga:
Silicon nitride ceramic substrates e masani ona faʻaaogaina i iunite eletise, masini semiconductor ma faʻaliliuina o taʻavale eletise mama (EVs) ma taʻavale eletise eletise (HEVs), ma e tele maketi gafatia ma faʻamoemoega faʻaoga.
I le taimi nei, o le maualuga o le vevela conductivity silicon nitride ceramic substrate mea mo talosaga faapisinisi e manaomia conductivity vevela ≥85 W / (m · K), punou malosi ≥650MPa, ma gau gau 5 ~ 7MPa · m1/2. O kamupani o lo'o i ai moni lava le malosi e fa'atupu tele ai le fa'auluina o le vevela silicon nitride ceramic substrates o le Toshiba Group, Hitachi Metals, Japan Electric Chemical, Japan Maruwa ma Iapani Fine Ceramics.
O su'esu'ega fa'ale-lotoifale i mea fa'amea fa'ameamea fa'ameamea o le silicon nitride sima ua fa'asolo fo'i i luma. O le conductivity vevela o le silicon nitride ceramic substrate saunia e le lipine faʻasologa o le Paranesi Beijing o Sinoma High-Tech Nitride Ceramics Co., Ltd. o 100 W/(m·K); Beijing Sinoma Artificial Crystal Research Institute Co., Ltd. ua manuia saunia se silicon nitride ceramic substrate ma le punou malosi o 700-800MPa, a gau gau ≥8MPa·m1/2, ma se thermal conductivity ≥80W/(m·K) e ala i le fa'amalieina o le auala ma le fa'agasologa o le sintering.
Taimi meli: Oke-29-2024