P-ituaiga SiC Substrate Wafer

Fa'amatalaga Puupuu:

Semicera's P-ituaiga SiC Substrate Wafer ua fa'ainisinia mo fa'aoga fa'aeletonika ma fa'aoga optoelectronic sili atu. O nei wafers e maua ai le amio fa'apitoa ma le mautu o le vevela, ma fa'amalieina mo masini fa'atino maualuga. Faatasi ai ma Semicera, faʻamoemoe e saʻo ma faʻamaoni i lau P-ituaiga SiC substrate wafers.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's P-ituaiga SiC Substrate Wafer ose vaega taua mo le atina'eina o masini eletise ma optoelectronic. O nei wafers ua faʻatulagaina faʻapitoa e tuʻuina atu ai le faʻaleleia atili o le faʻatinoga i le maualuga o le malosi ma le maualuga o le vevela, e lagolagoina ai le faʻatupulaia o le manaʻoga mo vaega lelei ma tumau.

O le P-type doping i totonu o matou SiC wafers e faʻamautinoa le faʻaleleia atili o le eletise ma le feʻaveaʻi o le avega. Ole mea lea e fa'apitoa ai mo fa'aoga ile eletise eletise, LED, ma sela photovoltaic, lea e maualalo ai le eletise ma maualuga le lelei e taua tele.

O lo'o gaosia ma tulaga maualuga o le sa'o ma le lelei, Semicera's P-ituaiga SiC wafers e ofoina atu le tutusa lelei o luga ma fa'aitiitia fua fa'aletonu. O nei uiga e taua tele mo alamanuia e manaʻomia ai le tumau ma le faʻamaoni, e pei o le aerospace, taʻavale, ma malosiaga faʻafouina.

O le tautinoga a Semicera i mea fou ma le lelei o loʻo faʻaalia i la matou P-type SiC Substrate Wafer. E ala i le tu'ufa'atasia o nei mea'ai i lau fa'agasologa o le gaosiga, e te fa'amautinoa ai e fa'amanuiaina au masini mai le fa'apitoa o le vevela ma le eletise o le SiC, e mafai ai ona fa'agaoioia lelei i lalo o tulaga lu'itau.

Fa'afaigaluegaina i le Semicera's P-type SiC Substrate Wafer o lona uiga o le filifilia o se oloa e tu'ufa'atasia ai mea fa'asaienisi fa'aonaponei ma fa'ainisinia ma'oti. Semicera e fa'amaoni i le lagolagoina o le isi augatupulaga o tekinolosi fa'aeletoroni ma optoelectronic, tu'uina atu vaega taua e mana'omia mo lou manuia i le semiconductor industry.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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