Silicon Carbide Coated Barrel Susceptor mo Wafer Epitaxial

Fa'amatalaga Puupuu:

Semicera o lo'o ofoina atu le tele o susceptors ma vaega graphite ua fuafuaina mo le tele o epitaxy reactors.

E ala i faiga fa'apa'aga fa'atasi ma OEM e ta'ita'ia i alamanuia, tomai fa'apitoa o meafaitino, ma agava'a gaosiga fa'asilisili, e tu'uina atu e Semicera ni mamanu fa'apitoa e fa'amalieina mana'oga fa'apitoa o lau talosaga. O la matou tautinoga i le tulaga lelei e faʻamautinoa ai e te mauaina ni fofo sili ona lelei mo ou manaʻoga epitaxy reactor.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

E saunia e le matou kamupaniSiC fa'apipi'iauaunaga faagasologa i luga o le graphite, ceramics ma isi mea e ala i le auala CVD, ina ia mafai ona gaoioi kasa faapitoa o loʻo i ai carbon ma silicon i le vevela maualuga e maua ai le mama mole Sic maualuga, lea e mafai ona teuina i luga o luga o mea ufiufi e fausia ai seSiC puipui puipuimo epitaxy paelo ituaiga hy pnotic.

Vaega autu:

1 .High mama SiC ufiufi graphite

2. Tete'e vevela sili & tutusa vevela

3. LeleiSiC ua ufiufi tioatamo se mea lamolemole

4. Maumau maualuga e faasaga i le faamamaina o vailaau

SiC Coated Barrel Susceptor mo Wafer Epitaxial

Fa'amatalaga Autu oFa'apipi'i CVD-SIC

SiC-CVD Meatotino
Fauga tioata	FCC β vaega
Malosi	g/cm ³	3.21
Malosi	Vickers maaa	2500
Tele o Saito	μm	2~10
Vailaau Mama	%	99.99995
Malosiaga vevela	J·kg-1 ·K-1	640
Sulimation Temperature	℃	2700
Malosi Felexural	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt pi'o, 1300℃)	430
Fa'alauteleina o le vevela (CTE)	10-6K-1	4.5
Fa'avevela vevela	(W/mK)	300