Semiconductor MOCVD mea fa'avevela fa'avevela, elemene fa'avevela MOCVD

Fa'amatalaga Puupuu:

O mea fa'avevela fou fa'alelei ma fau u'amea uma e mafai ona taofiofia le fa'aleagaina i le vevela maualuga. O lenei mea latou te maua ai le tele o mea lelei i le faʻaaogaina, e pei o le: maualuga le toe faʻaaogaina, maualuga maualuga, maualuga le faʻatuatuaina ma maualuga le fetaui.


Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

MOCVD Substrate Heater, Elemene Fa'avevela mo MOCVD
fa'avevela kafi:
O vaega faʻavevela graphite o loʻo faʻaaogaina i totonu o le ogaumu vevela maualuga ma le vevela e oʻo atu i le 2200 tikeri i le vacuum environment ma le 3000 tikeri i le siosiomaga kesi deoxidized ma faʻaofi.

MOCVD-Substrate-Vavela-Elemene-Faamafanafana-Mo-MOCVD2-300x300

MOCVD-Substrate-Vavela-Elemene-Faamafanafana-Mo-MOCVD3-300x300

MOCVD-Substrate-Vavela-Elemene-Faamafanafana-Mo-MOCVD-300x300

O mea autu o le faʻavevela graphite

1. tutusa o fausaga faamafanafana.
2. conductivity lelei eletise ma le mamafa eletise maualuga.
3. tete'e corrosion.
4. inoxidizability.
5. mama maualuga kemikolo.
6. malosi faʻainisinia maualuga.
O le lelei o le malosi lelei, maualuga le tau ma maualalo le tausiga.
E mafai ona tatou gaosia le anti-oxidation ma le umi o le ola o le graphite crucible, graphite mold ma vaega uma o le graphite heater.

Kemiki Graphite

Tulaga lelei: maualuga le vevela
Talosaga: MOCVD/Ogaumu mama/Vavela Sone
Malosi tele:1.68-1.91g/cm3
Malosi fa'alanotonu: 30-46Mpa
Resistivity: 7-12μΩm

Fa'amaufa'ailoga autu ole fa'avevela graphite

Fa'amatalaga Fa'apitoa VET-M3
To'atele (g/cm3) ≥1.85
Fuafua (PPM) ≤500
Maaa o le matafaga ≥45
Fa'ate'e Fa'apitoa (μ.Ω.m) ≤12
Malosi fa'afoliga (Mpa) ≥40
Malosi fa'amalosi (Mpa) ≥70
Max. Tele o Saito (μm) ≤43
Coefficient o le fa'alauteleina o le vevela Mm/°C ≤4.4*10-6

O le faʻavevela o le graphite mo le ogaumu eletise o loʻo i ai meatotino o le vevela, faʻamaʻi faʻamaʻiina, lelei eletise eletise ma sili atu le malosi faʻainisinia. E mafai ona matou masini ituaiga eseese o faʻavevela graphite e tusa ai ma mamanu a tagata faʻatau.

Fa'amatalaga a le Kamupani

tusa (3)
O le WeiTai Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa semiconductor ceramics ma e na'o le pau lea o le gaosiga i Saina e mafai ona tu'uina atu i le taimi e tasi le sima carbide silicon mama (aemaise le Recrystallized SiC) ma le CVD SiC coating. E le gata i lea, o loʻo tuʻuina atu foi la matou kamupani i fanua sima e pei o alumina, alumini nitride, zirconia, ma silicon nitride, ma isi.

O a tatou oloa autu e aofia ai: silicon carbide etching disc, silicon carbide tow va'a, silicon carbide wafer va'a (Photovoltaic & Semiconductor), silicon carbide ogaumu paipa, silicon carbide cantilever foe, silicon carbide chucks, silicon carbide beam, faapea foi ma le CVD SiC coating ma le TaC ufiufi. O oloa e masani ona faʻaaogaina i le semiconductor ma photovoltaic alamanuia, e pei o meafaigaluega mo le tuputupu aʻe tioata, epitaxy, etching, afifiina, ufiufi ma faʻasalalauga ogaumu, ma isi.

O la matou kamupani o loʻo i ai le gaosiga atoatoa o meafaigaluega e pei o le faʻapipiʻiina, sintering, gaioiga, mea faʻapipiʻi, ma isi mea, e mafai ona faʻamaeʻaina uma fesoʻotaʻiga talafeagai o le gaosiga o oloa ma maua ai le maualuga o le puleaina o le lelei o oloa; O le fuafuaga sili ona lelei e mafai ona filifilia e tusa ai ma manaʻoga o le oloa, e mafua ai le tau maualalo ma tuʻuina atu i tagata faʻatau oloa faʻatauvaʻa; E mafai ona matou fetuutuunai ma lelei le faʻatulagaina o le gaosiga e faʻavae i luga o manaʻoga tuʻuina atu o faʻatonuga ma faʻatasi ma faiga faʻatonu i luga ole laiga, tuʻuina atu i tagata faʻatau le taimi vave ma sili atu ona faʻamaonia.
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