O le Si Substrate e Semicera o se vaega taua i le gaosiga o masini semiconductor maualuga. Inisinia mai le maualuga-mama Silicon (Si), o lenei substrate e ofoina atu tulaga tulaga tutusa, mautu, ma le lelei conductivity, faia lelei mo le tele o talosaga alualu i luma i le semiconductor alamanuia. Pe fa'aaogaina i le Si Wafer, SiC Substrate, SOI Wafer, po'o le SiN Substrate gaosiga, o le Semicera Si Substrate e tu'uina atu tulaga lelei ma sili atu le fa'atinoga e fa'afetaui ai le fa'atupulaia o mana'oga o mea fa'atekonolosi fa'aonaponei ma mea fa'asaienisi.
Fa'atinoga le Mafaatusalia ma le Mamalu Maualuga ma le Sa'o
Semicera's Si Substrate o lo'o gaosia i le fa'aogaina o faiga fa'apitoa e fa'amautinoa ai le maualuga o le mama ma le fa'atonutonuina o fua. O le substrate o loʻo avea ma faʻavae mo le gaosiga o mea eseese e maualuga le faatinoga, e aofia ai Epi-Wafers ma AlN Wafers. O le saʻo ma le tutusa o le Si Substrate e avea ma filifiliga sili ona lelei mo le fatuina o laupepa epitaxial manifinifi ma isi vaega taua o loʻo faʻaaogaina i le gaosiga o isi augatupulaga semiconductors. Pe o e galue ma Gallium Oxide (Ga2O3) poʻo isi mea faʻapitoa, Semicera's Si Substrate faʻamautinoa le maualuga maualuga o le faʻatuatuaina ma le faʻatinoga.
Talosaga i Semiconductor Manufacturing
I totonu o le semiconductor industry, o le Si Substrate mai Semicera o loʻo faʻaaogaina i le tele o faʻaoga, e aofia ai le Si Wafer ma le SiC Substrate gaosiga, lea e maua ai se faʻamautu, faʻalagolago mo le faʻapipiʻiina o laupepa malosi. E taua tele le sao o le substrate i le fausiaina o SOI Wafers (Silicon On Insulator), lea e taua mo microelectronics alualu i luma ma fesoʻotaʻiga tuʻufaʻatasia. E le gata i lea, Epi-Wafers (epitaxial wafers) fausia i luga o Si Substrates e taua tele i le gaosia o masini semiconductor maualuga e pei o transistors eletise, diodes, ma fesoʻotaʻiga tuʻufaʻatasia.
E lagolagoina foi e le Si Substrate le gaosiga o masini e faʻaaoga ai le Gallium Oxide (Ga2O3), o se mea faʻalauiloa lautele-bandgap faʻaaogaina mo faʻaoga maualuga i le eletise eletise. E le gata i lea, o le fesoʻotaʻiga o Semicera's Si Substrate ma AlN Wafers ma isi mea faʻapitoa e faʻamautinoa ai e mafai ona ausia manaoga eseese o alamanuia faʻatekonolosi, ma avea ai ma fofo lelei mo le gaosiga o masini mataʻutia i fesoʻotaʻiga, taʻavale, ma pisinisi. .
Fa'atuatuaina ma Tulaga Tulaga Lelei mo Talosaga Fa'atekonolosi Maualuga
O le Si Substrate e Semicera ua fa'atonuina ma le fa'aeteete e fa'amalieina ai mana'oga faigata o le fa'aogaina o semiconductor. O lona tulaga fa'apitoa o le fa'atonuga ma le tulaga maualuga o mea i luga ole laiga ua avea ai ma mea lelei mo le fa'aogaina i kaseti mo felauaiga wafer, fa'apea fo'i ma le fa'atupuina o fa'ama'i sa'o maualuga i masini semiconductor. O le malosi o le substrate e fa'atumauina le tulaga lelei i lalo o tulaga fa'agasologa eseese e fa'amautinoa ai le la'ititi o fa'aletonu, fa'aleleia atili le fua ma le fa'atinoga o le oloa fa'ai'u.
Faatasi ai ma lona maualuga maualuga o le vevela, malosi faʻainisinia, ma le mama maualuga, Semicera's Si Substrate o le mea e filifilia mo tagata gaosi oloa o loʻo vaʻavaʻai e ausia tulaga maualuga o le saʻo, faʻamaoni, ma le faʻatinoga i le gaosiga o le semiconductor.
Filifili Semicera's Si Substrate mo Fofo Sili-Mama, Maualuluga
Mo tagata gaosi oloa i totonu o le semiconductor industry, o le Si Substrate mai Semicera e ofoina atu se fofo malosi, maualuga-lelei mo le tele o faʻaoga, mai le Si Wafer gaosiga i le fausiaina o Epi-Wafers ma SOI Wafers. Faatasi ai ma le le mafaatusalia mama, saʻo, ma le faʻamaoni, o lenei substrate e mafai ai le gaosiga o masini semiconductor tipi, faʻamautinoa le faʻatinoina o se taimi umi ma sili ona lelei. Filifili Semicera mo ou mana'oga Si substrate, ma fa'alagolago i se oloa ua fuafuaina e fa'afetaui ai mana'oga o tekonolosi a taeao.
Aitema | Gaosiga | Suesuega | Faafoliga |
Fa'a tioata | |||
Polytype | 4H | ||
Fa'asagaga i luga ole mea sese | <11-20 >4±0.15° | ||
Fa'aeletise Parata | |||
Fa'amamafa | n-ituaiga Nitrogen | ||
Tete'e | 0.015-0.025ohm·cm | ||
Fa'ailoga Fa'ainisinia | |||
Diamita | 150.0±0.2mm | ||
mafiafia | 350±25 μm | ||
Primary flat orientation | [1-100]±5° | ||
Muamua mafolafola umi | 47.5±1.5mm | ||
Lua mafolafola | Leai | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Fauga | |||
Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Uamea eleelea | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tulaga Luma | |||
Luma | Si | ||
Fa'ai'uga luga | Si-foliga CMP | ||
fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
Faailoga leisa pito i luma | Leai | ||
Tulaga Tulaga | |||
Fa'ai'u tua | C-foliga CMP | ||
Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
faaletonu i tua | Leai | ||
Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
pito | |||
pito | Chamfer | ||
afifiina | |||
afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. |