SiC Coated Graphite Base Susceptors mo MOCVD

Susceptors faavae o le kalafi SiCmo MOCVD mai semicera ua faʻainisinia e tuʻuina atu faʻatinoga faʻapitoa i faʻagasologa tuputupu aʻe epitaxial. O le silicon carbide coating i luga o le graphite base e faʻamautinoa ai le mautu, tumau, ma le faʻaogaina lelei o le vevela i le taimi o le MOCVD (Metal Organic Chemical Vapor Deposition). E ala i le fa'aogaina o tekinolosi fou susceptor a semicera, e mafai ona e ausia le fa'aleleia atili o le sa'o ma le lelei i totonuO le EpitaxymaSiC Epitaxytalosaga.

O neiMOCVD Susceptorsua mamanuina e lagolago ai le tele o vaega semiconductor taua, e pei oPSS Etching Carrier, ICP Etching Carrier, maRTP Carrier, fa'afaigofieina mo galuega eseese etching ma epitaxial. O le tautinoga a Semicera i tulaga maualuga e faʻamautinoa ai o nei susceptors e fetaui ma manaʻoga faigata o le gaosiga o semiconductor faʻaonapo nei.

Lelei mo le faʻaaogaina i totonuLED EpitaxialSusceptor, Barrel Susceptor, ma Monocrystalline Silicon faiga, o nei susceptors e mafai ona faʻapipiʻiina mo lapopoa eseese, e aofia ai faʻasalalauga Pancake Susceptor. E sili atu foi le aoga i le taulimaina o Vaega o Photovoltaic, ma avea ai ma vaega taua i le atinaʻeina o sela lelei o le la.

E le gata i lea, o SiC Coated Graphite Base Susceptors mo le MOCVD ua faʻamaonia mo GaN i luga o le SiC Epitaxy, e ofoina atu le maualuga o fesoʻotaʻiga ma mea faʻaoga semiconductor. Pe o e taulaʻi i le faʻaleleia atili o fua poʻo le faʻaleleia o le tulaga lelei o le tuputupu aʻe o le epitaxial, e tuʻuina atu e le susceptors semicera le faʻamaoni ma le faʻatinoga e manaʻomia mo le manuia i alamanuia maualuluga.