Fa'amea fa'amea fa'asili silisi

Fa'amatalaga Puupuu:

Silicon carbide foe, e lauiloa foi o le silicon carbide cantilever foe, silicon carbide cantilever beam o se ituaiga o oloa sima carbide silicon pe a uma le 1850maualuga vevela sintering, ae maualuga vevela sintering silicon carbide ceramic o se oloa sima faapitoa, e ala i vaega laiti.α-SiC ma faʻaopoopoga oomi i totonu o se avanoa, faʻafesoʻotaʻi ma le silikoni vai i le maualuga o le vevela, carbon i le avanoa ma le faʻaogaina o le tali Si, le faʻavaeina oβ-SiC,Ma faʻatasi ma le α-SiC, leai se totogi o le silicon na faʻatumuina le porosity, ina ia maua ai mea sima maualuga; O lo'o i ai uiga maualuga eseese o mea gaosi oloa.

 


Fa'amatalaga Oloa

Faailoga o oloa

SiC Cantilever foeo loʻo faʻaaogaina i totonu o le ogaumu faʻapipiʻi faʻasalalau o le alamanuia photovoltaic mo le ufiufi monocrystalline ma polycrystalline silicon wafers. O lona uiga e mafai ai ona tatalia le maualuga o le vevela ma le pala, ma maua ai se olaga umi.
O leSiC Cantilever foetu'uina atu va'a SiC / va'a quartz o lo'o fa'amomoe fa'ama'i kasa i totonu o le fa'aauumu fa'afefeteina maualuga maualuga.
O le umi o lo tatouSiC Cantilever foee mai le 1,500 i le 3,500 mm.SiC Cantilever foefua e mafai ona fa'atulagaina e tusa ai ma fa'amatalaga a tagata fa'atau.

Mea fa'aletino o le Silicon Carbide ua toe fa'akrista

Meatotino

Taua masani

vevela galue (°C)

1600°C (faatasi ai ma le okesene), 1700°C (faaitiitia le siosiomaga)

SiC anotusi

> 99.96%

Free Si anotusi

< 0.1%

Fa'atosina tele

2.60-2.70 g/cm3

E aliali mai le porosity

<16%

Malosi fa'amalosi

> 600 MPa

Malosi punou malulu

80-90 MPa (20°C)

Malosi o le punou vevela

90-100 MPa (1400°C)

Fa'ateleina le vevela @1500°C

4.70 10-6/°C

Fa'avevela vevela @1200°C

23 W/m•K

Fa'aula'i fa'alava

240 GPa

Tete'e te'i vevela

Lelei tele

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