SiC Cantilever foeo loʻo faʻaaogaina i totonu o le ogaumu faʻapipiʻi faʻasalalau o le alamanuia photovoltaic mo le ufiufi monocrystalline ma polycrystalline silicon wafers. O lona uiga e mafai ai ona tatalia le maualuga o le vevela ma le pala, ma maua ai se olaga umi.
O leSiC Cantilever foetu'uina atu va'a SiC / va'a quartz o lo'o fa'amomoe fa'ama'i kasa i totonu o le fa'aauumu fa'afefeteina maualuga maualuga.
O le umi o lo tatouSiC Cantilever foee mai le 1,500 i le 3,500 mm.SiC Cantilever foefua e mafai ona fa'atulagaina e tusa ai ma fa'amatalaga a tagata fa'atau.
Mea fa'aletino o le Silicon Carbide ua toe fa'akrista | |
Meatotino | Taua masani |
vevela galue (°C) | 1600°C (faatasi ai ma le okesene), 1700°C (faaitiitia le siosiomaga) |
SiC anotusi | > 99.96% |
Free Si anotusi | < 0.1% |
Fa'atosina tele | 2.60-2.70 g/cm3 |
E aliali mai le porosity | <16% |
Malosi fa'amalosi | > 600 MPa |
Malosi punou malulu | 80-90 MPa (20°C) |
Malosi o le punou vevela | 90-100 MPa (1400°C) |
Fa'ateleina le vevela @1500°C | 4.70 10-6/°C |
Fa'avevela vevela @1200°C | 23 W/m•K |
Fa'aula'i fa'alava | 240 GPa |
Tete'e te'i vevela | Lelei tele |