SemiceraSilicon Carbide Fa'aluega Simaose fa'alavalava fa'ae'e maualuga e fai i mea fa'amea silicon carbide (SiC). O le ufiufi e masani lava ona teuina i luga o le pito i luga o le substrate e le CVD poʻo le PVD faagasologa mafasimea carbide silikoni, tu'uina atu fa'a'a'ala'au vaila'au sili ona lelei ma mautu le vevela maualuga. O le mea lea, o le Silicon Carbide Ceramic Coating o loʻo faʻaaogaina lautele i vaega autu o masini gaosiga semiconductor.
I le gaosiga o semiconductor,SiC fa'apipi'ie mafai ona tatalia le maualuga tele o le vevela e oʻo atu i le 1600 ° C, o lea e masani ona faʻaaogaina le Silicon Carbide Ceramic Coating e fai ma puipui puipui mo meafaigaluega poʻo meafaigaluega e puipuia ai le faʻaleagaina i le maualuga o le vevela poʻo le faʻaleagaina o siosiomaga.
I le taim lava lena,fa'apipi'i sima carbide silikone mafai ona tetee atu i le tafia o acids, alkalis, oxides ma isi reagents kemikolo, ma e maualuga le corrosion teteʻe i le eseese o vailaau. O le mea lea, e talafeagai lenei oloa mo siosiomaga corrosive eseese i le alamanuia semiconductor.
E le gata i lea, pe a faʻatusatusa i isi mea sima, o le SiC e maualuga atu le faʻaogaina o le vevela ma e mafai ona faʻatautaia lelei le vevela. O lenei vaega e fuafua e faapea i faiga semiconductor e manaʻomia le pulea saʻo o le vevela, le maualuga o le conductivity vevela oSilicon Carbide Fa'aluega Simafesoasoani e fa'asalalau fa'atasi le vevela, puipuia le vevela fa'apitonu'u, ma fa'amautinoa o lo'o fa'agaoioia le masini i le vevela sili ona lelei.
| Mea fa'aletino fa'aletino o le CVD sic coating | |
| Meatotino | Taua masani |
| Fauga tioata | FCC β vaega polycrystalline, tele (111) fa'atatau |
| Malosi | 3.21 g/cm³ |
| Malosi | 2500 Vickers malo (500g uta) |
| Fua Saito | 2~10μm |
| Vailaau Mama | 99.99995% |
| Malosiaga vevela | 640 J·kg-1·K-1 |
| Sulimation Temperature | 2700 ℃ |
| Malosi Fa'asusu | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt pi'o, 1300 ℃ |
| Amioga vevela | 300W·m-1·K-1 |
| Fa'alauteleina o le vevela(CTE) | 4.5×10-6K-1 |
