Graphite Susceptors ma Silicon Carbide Ufiufi Ufiufi mo paelo

Fa'amatalaga Puupuu:

Semicera o lo'o ofoina atu le tele o susceptors ma vaega graphite ua fuafuaina mo le tele o epitaxy reactors.

E ala i faiga fa'apa'aga fa'atasi ma OEM e ta'ita'ia i alamanuia, tomai fa'apitoa o meafaitino, ma agava'a gaosiga fa'asilisili, e tu'uina atu e Semicera ni mamanu fa'apitoa e fa'amalieina mana'oga fa'apitoa o lau talosaga. O la matou tautinoga i le tulaga lelei e faʻamautinoa ai e te mauaina ni fofo sili ona lelei mo ou manaʻoga epitaxy reactor.

 


Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

O la matou kamupani e tuʻuina atu auaunaga faʻapipiʻi SiC e ala i le auala CVD i luga o le graphite, ceramics ma isi mea, ina ia mafai ai e kasa faʻapitoa o loʻo i ai carbon ma silicon ona tali atu i le maualuga o le vevela e maua ai le mama maualuga SiC mole, molelaʻau teuina i luga o mea faʻapipiʻi, fa'atūina le SIC fa'apipi'i puipui.

SiC inductors1
SiC inductors2

Vaega Autu

1 .High mama SiC ufiufi graphite

2. Tete'e vevela sili & tutusa vevela

3. Fine SiC tioata fa'apipi'iina mo le lamolemole

4. Maumau maualuga e faasaga i le faamamaina o vailaau

Fa'amatalaga autu o le CVD-SIC Coating

SiC-CVD Meatotino
Fauga tioata FCC β vaega
Malosi g/cm ³ 3.21
Malosi Vickers maaa 2500
Tele o Saito μm 2~10
Vailaau Mama % 99.99995
Malosiaga vevela J·kg-1 ·K-1 640
Sulimation Temperature 2700
Malosi Felexural MPa (RT 4-point) 415
Young's Modulus Gpa (4pt pi'o, 1300℃) 430
Fa'alauteleina o le vevela (CTE) 10-6K-1 4.5
Fa'avevela vevela (W/mK) 300
图片 3
图片 1
图片 2
图片 4
图片 5
Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
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