Fa'amatalaga
O leSilicon Carbide (SiC) Wafer Susceptorsmo MOCVD mai semicera ua mamanuina mo faiga epitaxial alualu i luma, ofoina atu faatinoga sili atu mo uma e luaO le EpitaxymaSiC Epitaxytalosaga. Ole faiga fou a Semicera e fa'amautinoa ai o nei susceptors e umi ma lelei, e maua ai le mautu ma le sa'o mo galuega fa'apitoa tau gaosiga.
Inisinia e lagolago ai manaoga lavelave oMOCVD Susceptorfaiga, o nei oloa e tele, fetaui ma ave e pei o le PSS Etching Carrier, ICP Etching Carrier, ma le RTP Carrier. O lo latou fetuutuuna'i e mafai ai ona talafeagai mo alamanuia maualuga-tekonolosi, e aofia ai i latou o loʻo galulue faʻatasiLED EpitaxialSusceptor ma Monocrystalline Silicon.
Faatasi ai ma le tele o fetuunaiga, e aofia ai le Barrel Susceptor ma Pancake Susceptor, o nei susceptors wafer e taua foi i le vaega photovoltaic, lagolagoina le gaosiga o Vaega o Photovoltaic. Mo tagata gaosi semiconductor, o le gafatia e faʻatautaia le GaN i luga ole SiC Epitaxy faiga e faʻamalosia ai nei susceptors e matua taua tele mo le faʻamautinoaina o le maualuga o le gaosiga i luga o le tele o faʻaoga.
Vaega Autu
1 .High mama SiC ufiufi graphite
2. Tete'e vevela sili & tutusa vevela
3. LeleiSiC ua ufiufi tioatamo se mea lamolemole
4. Maumau maualuga e faasaga i le faamamaina o vailaau
Fa'amatalaga autu o le CVD-SIC Coatings:
SiC-CVD | ||
Malosi | (g/cc) | 3.21 |
Malosi fa'apa'u | (Mpa) | 470 |
Fa'alauteleina o le vevela | (10-6/K) | 4 |
Fa'avevela vevela | (W/mK) | 300 |
afifiina ma uta
Avanoa Avanoa:
10000 Piece/Pieces i le masina
afifiina ma Tiliva:
Fa'aputuina: Fa'auma ma Malosi
Poly taga + Pusa + Pusa + Pusa
Taulaga:
Ningbo/Shenzhen/Shanghai
Taimi muamua:
Aofa'i (Isi) | 1-1000 | >1000 |
Est. Taimi(aso) | 30 | Ia feutagai |