Silicon nitride o se sima efuefu ma maualuga gau gau, e sili atu le tete'i vevela vevela, ma e fai si le mafai ona fa'aogaina i u'amea liusuavai.
I le faʻaaogaina o nei uiga, e faʻaaogaina i totonu o le afi afi afi e pei o vaega afi afi, masini uʻamea blowpipe nozzles, ma isi, aemaise lava vaega e manaʻomia ona faʻaaogaina i siosiomaga faigata e pei o le vevela.
Faʻatasi ai ma le maualuga o le faʻaogaina o le ofuina ma le maualuga o le malosi faʻainisinia, o ana faʻaoga i le faʻaaogaina o vaega taʻavale, faʻataʻamilomilo paʻu paʻu ma semiconductor gaosiga o meafaigaluega faʻapitoa o loʻo faʻalauteleina pea.
O mea fa'aletino o mea fa'aoga silicon nitride | Silicon nitride (Sic) | |||
Lanu | Lanu uliuli | |||
Autu vaega autu | - | |||
Autu autu | Mamafa mama, faʻaofuofu tetee, maualuga le vevela. | |||
Fa'aoga autu | Vaega e tetee i le vevela, vaega e le ofuina, vaega e mafai ona pala. | |||
Malosi | g/cc | 3.2 | ||
Hydroscopicity | % | 0 | ||
Uiga fa'ainisinia | Vickers maaa | GPa | 13.9 | |
Malosi punou | MPa | 500-700 | ||
Malosi fa'amalosi | MPa | 3500 | ||
Modulus a talavou | GPA | 300 | ||
fua faatatau a Poisson | - | 0.25 | ||
Malosi gau | MPA·m1/2 | 5-7 | ||
Uiga vevela | Coefficient o le faalauteleina laina | 40-400 ℃ | x10-6/℃ | 2.6 |
Fa'avevela vevela | 20° | W/(m·k) | 15-20 | |
vevela faapitoa | J/(kg·k)x103 |
| ||
uiga faaeletise | Tete'e o le voluma | 20℃ | Ω·cm | >1014 |
Malosiaga dielectric |
| KV/mm | 13 | |
Dielectric tumau |
| - |
| |
Dielectric gau gau |
| x10-4 |
| |
uiga fa'ama'i | Nitric acid | 90℃ | Pa'u mamafa | <1.0<> |
Vitriol | 95℃ | <0.4<> | ||
Sodium hydroxide | 80 ℃ | <3.6<> |