Tantalum carbide (TaC)o se mea sili-maualuga vevela tete'e sima ma le lelei o le maualuga o le liusuavai, maualuga maualuga, mautu kemisi lelei, malosi eletise ma le vevela conductivity, ma isi.TaC fa'apipi'ie mafai ona faʻaaogaina e pei o le ablation-resistant coating, oxidation-resistant coating, ma le ofutino faʻafefete, ma e faʻaaogaina lautele i le puipuiga o le vevela o le ea, lona tolu-tupulaga semiconductor tuputupu aʻe tioata, eletise eletise ma isi fanua.
Fa'agasologa:
Tantalum carbide (TaC)o se ituaiga ultra-maualuga vevela resistant ceramic mea ma le lelei o le maualuga o le liusuavai, maualuga maaa, lelei mautu kemisi, malosi eletise ma le vevela conductivity. O le mea lea,TaC fa'apipi'ie mafai ona faʻaaogaina e pei o le ablation-resistant coating, oxidation-resistant coating, ma le ofutino faʻafefete, ma e faʻaaogaina lautele i le puipuiga o le vevela o le ea, lona tolu-tupulaga semiconductor tuputupu aʻe tioata, eletise eletise ma isi fanua.
Fa'ailoga fa'apitoa o paluga:
Matou te fa'aogaina le slurry-sintering method e saunia aiTaC coatingso mafiafia eseese i luga ole graphite substrates o lapopoa eseese. Muamua, o le pauta mama-maualuga o loʻo iai Ta puna ma C puna ua configured ma dispersant ma fusi e fausia ai se toniga ma mautu slurry precursor. I le taimi lava e tasi, e tusa ai ma le tele o vaega graphite ma manaoga mafiafia oTaC fa'apipi'i, o le muaʻi faʻapipiʻiina e saunia e ala i le sasaina, sasaa, faʻafefe ma isi ituaiga. Ma le mea mulimuli, e vevela i luga aʻe o le 2200 ℃ i totonu o se siosiomaga gaogao e saunia ai se toniga, mafiafia, tasi-vaega, ma lelei-maʻamea.TaC fa'apipi'i.
Fa'ailoga fa'apitoa o paluga:
O le mafiafia oTaC fa'apipi'ie tusa ma le 10-50 μm, o fatu e ola i se faʻasalalauga e leai se totogi, ma e aofia ai le TaC faʻatasi ai ma le faʻaogaina o le kupita faʻasaga i foliga, e aunoa ma isi mea leaga; o le ufiufi e mafiafia, o le fausaga ua atoatoa, ma le tioata e maualuga.TaC fa'apipi'ie mafai ona faʻatumu pores i luga o le graphite, ma o loʻo faʻapipiʻiina faʻamalosi i le graphite matrix ma le malosi faʻapipiʻi maualuga. O le fua faatatau o le Ta i le C i le ufiufi e latalata ile 1:1. O le GDMS mama aʻiaʻi suʻesuʻega faʻataʻitaʻiga ASTM F1593, o le faʻaogaina o le eleelea e itiiti ifo i le 121ppm. Ole fa'asologa ole fa'asologa ole fa'asologa (Ra) o le fa'ailoga fa'apipi'i e 662nm.
Talosaga Lautele:
GaN maSiC epitaxialO vaega o le CVD reactor, e aofia ai mea e feaveai wafer, ipu satelite, ulu ta'ele, ie pito i luga ma susceptors.
SiC, GaN ma AlN vaega tuputupu aʻe tioata, e aofia ai uʻamea, fatu tioata o loʻo uuina, taʻiala tafe ma filiga.
Vaega fa'apisinisi, e aofia ai elemene faʻavevela tetee, faʻaumu, mama talipupuni ma mea faʻapipiʻi.
O mea taua:
Maualuluga o le vevela i le 2600℃
Tuuina atu puipuiga tumau-tumau i siosiomaga kemikolo malosi o H2, NH3, SiH4ma Si ausa
E fetaui lelei mo le tele o gaosiga faʻatasi ma faʻasologa o gaosiga puʻupuʻu.
