SOI Wafers

Fa'amatalaga Puupuu:

O le wafer SOI o se fausaga e pei o sanuisi ma ni laulau e tolu; E aofia ai le pito i luga (mea masini), le ogatotonu o le okesene okesene tanumia (mo le insulating SiO2 layer) ma le pito i lalo (bulk silicon). SOI wafers e gaosia e fa'aaoga ai le SIMOX ma le wafer bonding technology, lea e mafai ai ona manifinifi ma sili atu le sa'o o mea masini, mafiafia toniga ma maualalo le fa'aletonu.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

SOI Wafers(1)

Talosaga fanua

1. Saosaoa maualuga fesoʻotaʻiga fesoʻotaʻiga

2. masini microwave

3. maualuga vevela feso'ota'iga feso'ota'iga

4. Masini eletise

5. Maualalo le eletise tu'ufa'atasiga

6. MEMS

7. Laiti eletise tu'u fa'atasi

Aitema		finauga
Aotelega	Fuafu lapoa 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Aufana 翘曲度(	<10um
	fasimea 颗粒度(	0.3um<30ea
	Flats/Notch 定位边/定位槽	Mafolafola pe Notch
	Tuusaunoaga Tupito 边缘去除(mm)	/
Fa'ameamea 器件层	Ituaiga Fa'aafu-Meafaigaluega/Dopant 器件层掺杂类型	N-ituaiga/P-ituaiga B/ P/ Sb / As
	Fa'asinomaga Fa'aaopoga masini 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Mafiafia o Mea Fa'apipi'i 器件层厚度(um)	0.1~300um
	Fa'asagaga o mea fa'apipi'i 器件层电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Fa'ameamea fa'apalapala 器件层颗粒度(	<30ea@0.3
	Mea Fa'ameamea TTV 器件层TTV(	<10um
	Fa'auma Mea Fa'atonu 器件层表面处理	Faila
PUSA	Tanumia Oxide Mafiafia 埋氧层厚度(um)	50nm(500Å)~15um
Uu Layer 衬底	Uu Wafer Type/Dopant 衬底层类型	N-ituaiga/P-ituaiga B/ P/ Sb / As
	Uu Fa'asinomaga Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	U'u le Wafer Resistivity 衬底电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Uu Mafiafia Wafer 衬底厚度(um)	>100um
	Uu Wafer Fa'auma 衬底表面处理	Faila
SOI wafers o faʻamatalaga faʻatatau e mafai ona faʻapipiʻiina e tusa ai ma manaoga o tagata faatau.