Ole Solid Silicon Carbide(SiC) Etching Rings ofo mai e Semicera o lo'o gaosia e le Chemical Vapor Deposition (CVD) metotia ma o se taunuuga mataʻina i le tulaga o le saʻo o le faʻaogaina o faʻagasologa o talosaga. O nei Solid Silicon Carbide (SiC) Etching Rings ua lauiloa mo lo latou malosi sili, faʻamautu faʻamafanafana ma le faʻafefeteina, ma o le maualuga o meafaitino e faʻamautinoa e le CVD synthesis.
Fa'ata'atia fa'apitoa mo faiga fa'ailoga, o le Solid Silicon Carbide(SiC) Etching Rings' fausaga gaoa ma meatotino tulaga ese o lo'o i ai se sao taua i le ausiaina o le sa'o ma le fa'amaoni. E le pei o mea faʻaleaganuʻu, o le vaega mautu SiC e le mafaatusalia le tumau ma le ofuina o le teteʻe, ma avea o se vaega taua i alamanuia e manaʻomia le saʻo ma le umi o le ola.
O matou Solid Silicon Carbide(SiC) Etching Rings e sa'o lelei le gaosiga ma le lelei e fa'atonuina ina ia mautinoa ai le maualuga o le fa'atinoga ma le fa'amaoni. Pe i semiconductor gaosiga poʻo isi matāʻupu faʻafesoʻotaʻi, o nei Solid Silicon Carbide (SiC) Etching Rings e mafai ona tuʻuina atu le faʻatinoina o le faʻaogaina ma le lelei o faʻaiʻuga.
Afai e te fiafia i la matou Solid Silicon Carbide (SiC) Etching Ring, faʻamolemole faʻafesoʻotaʻi matou. O la matou 'au o le a tu'uina atu ia te oe fa'amatalaga auiliili o oloa ma lagolago fa'apolofesa fa'apolofesa e fetaui ma ou mana'oga. Matou te tulimatai atu i le faʻavaeina o se faiga faapaaga umi ma oe ma faʻasalalau faʻatasi le atinaʻeina o pisinisi.
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Epitaxy Growth Susceptor
Silicon / silicon carbide wafers e manaʻomia ona uia le tele o faʻagasologa e faʻaaogaina i masini eletise. O se faiga taua o le silicon/sic epitaxy, lea o lo'o fa'asolo ai fa'ama'i fa'asolo i luga ole kalafi. Fa'apitoa fa'apitoa o le fa'avae graphite fa'apipi'iina o le silicon carbide a Semicera e aofia ai le mama maualuga, fa'aofuofu toniga, ma le umi o le auaunaga. E iai fo'i le maualuga o le kemikolo ma le fa'amautu o le vevela.
Gaosiga Chip LED
I le taimi o le faʻapipiʻiina lautele o le MOCVD reactor, o le paneta faʻavae poʻo le vaʻavaʻa e faʻanofoina le meaʻai. O le faʻatinoga o mea faʻavae e iai se aafiaga tele i le lelei o le ufiufi, lea e aʻafia ai le fua o le pu. Semicera's silicon carbide-coated base e faʻateleina ai le gaosiga lelei o faʻamaʻi faʻamalama LED maualuga ma faʻaitiitia ai le vaeluaga o le galu. Matou te tu'uina atu fo'i vaega fa'aopoopo o le kalafi mo masini fa'a'ave'ave uma a le MOCVD o lo'o fa'aogaina nei. E mafai ona tatou faʻaofuina toetoe o soʻo se vaega i se faʻapipiʻi carbide silicon, e tusa lava pe oʻo atu i le 1.5M le lautele o le vaega, e mafai lava ona tatou ofuina i le carbide silicon.
Semiconductor Field, Oxidation Diffusion Process, ma isi.
I le faagasologa o le semiconductor, o le faʻaogaina o le faʻamaʻiina o le faʻamaʻiina e manaʻomia ai le mama maualuga o oloa, ma i Semicera matou te ofoina atu auaunaga faʻapipiʻi masani ma CVD mo le tele o vaega carbide silicon.
O le ata o loʻo i lalo o loʻo faʻaalia ai le slurry silicon carbide slurry o Semicea ma le ogaumu carbide silicon carbide o loʻo faʻamamaina i le 1000-tulagaleai se pefupotu. O matou tagata faigaluega o loʻo galulue aʻo leʻi faʻapipiʻiina. O le mama o la tatou silicon carbide e mafai ona oʻo atu i le 99.99%, ma le mama o le sic coating e sili atu nai lo le 99.99995%.
Foe Silicon Carbide Mata ma SiC Process Tube ile Fa'amama
Silicon Carbide Wafer Va'a CVD SiC ua ufiufi
