Tulaga lelei
Tete'e o le oxidation maualuga vevela
Sili ona tetee Corrosion
Lelei abrasion tetee
maualuga maualuga o le faʻafefe o le vevela
Self-lubricity, maualalo le mamafa
Malosi maualuga
Fa'ailoga fa'apitoa.
Talosaga
-Fa'asa'o fa'aofuofu fanua: fa'ato'aga, ipu, fa'asusu oneone, fa'alava afā, pa'u olo, ma isi...
-Mata'a maualuga fanua: siC Slab, Quenching ogaumu Tube, Radiant Tube, ipu, Elemene faʻavevela, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC vaʻa, Kiln Car Structure, Seti, ma isi.
-Silicon Carbide Semiconductor: SiC wafer va'a, sic chuck, sic foe, sic kaseti, sic diffusion tube, wafer fork, suction plate, guideway, etc.
-Silicon Carbide Seal Field: ituaiga uma o faʻamaufaʻailoga mama, faʻamau, togavao, ma isi.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, ma isi.
- Lithium Battery Field
Meatotino Faaletino O SiC
| Meatotino | Taua | Metotia |
| Malosi | 3.21 g/cc | Sink-opeopea ma le fua |
| vevela faapitoa | 0.66 J/g °K | Emo leisa fa'amalo |
| Malosi fa'apa'u | 450 MPa 560 MPa | 4 mata pi'o, RT4 mata pi'o, 1300° |
| Malosi gau | 2.94 MPa m1/2 | Microindentation |
| Malosi | 2800 | Vicker's, 500g uta |
| Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt pi'o, RT4 pt pi'o, 1300 °C |
| Tele o saito | 2 – 10 µm | SEM |
Meatotino vevela o le SiC
| Amioga vevela | 250 W/m °K | Metotia uila laser, RT |
| Fa'alauteleina o le vevela (CTE) | 4.5 x 10-6 °K | O le vevela o le potu i le 950 °C, silica dilatometer |
Vaega Fa'atekinisi
| Aitema | Vaega | Fa'amaumauga | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC anotusi | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Mea e maua fua le kakoni | % | 15 | 0 | 0 | 0 | 0 |
| Max auaunaga vevela | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Malosi | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Matala porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Malosi punou 20℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Malosi punou 1200℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulus o elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus o elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Fa'avevela vevela 1200℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient o le faalauteleina o le vevela | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
O le CVD silicon carbide coating i luga o le pito i fafo o recrystallized silicon carbide ceramic oloa e mafai ona oʻo atu i le mama o le sili atu i le 99.9999% e faʻafetaui ai manaʻoga o tagata faʻatau i le semiconductor alamanuia.
