1. E uiga iSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers e faia e ala i le teuina o se tioata tioata se tasi i luga o se masi fa'aoga e fa'aaoga ai se fa'ama'i tioata tasi e fai ma sui, e masani lava e ala i le fa'aogaina o ausa (CVD). Faatasi ai ma i latou, ua saunia epitaxial silicon carbide e ala i le totoina o le silicon carbide epitaxial layer i luga o le conductive silicon carbide substrate, ma faʻapipiʻi atili i masini maualuga.
2.Silicon Carbide Epitaxial WaferFa'amatalaga
E mafai ona matou tuʻuina atu 4, 6, 8 inisi N-ituaiga 4H-SiC epitaxial wafers. O le epitaxial wafer e tele le bandwidth, maualuga le saturation electron drift speed, maualuga le saoasaoa lua-dimensional electron gas, ma le maualuga malepelepe malosi fanua. O nei meatotino e maua ai e le masini le maualuga o le vevela, teteʻe maualuga o le voltage, faʻavave vave suiga, maualalo i luga-tetee, laʻititi laʻititi ma le mamafa mama.
3. SiC Epitaxial Applications
SiC epitaxial wafere masani ona faʻaaogaina i Schottky diode (SBD), uʻamea oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), lea e faʻaaogaina. i fanua maualalo-voltage, feololo-voltage ma maualuga-voltage. I le taimi nei,SiC epitaxial wafersmo talosaga maualuga-voltage o loʻo i totonu o suʻesuʻega ma atinaʻe tulaga i le lalolagi atoa.
