Fa'amatalaga o oloa
4h-n 4inch 6inch dia100mm sic fatu masima 1mm mafiafia mo le tuputupu aʻe o ingot
Customzied lapopoa/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/4H-N SIC ingots/Mama maualuga 4H-N 4inch 6inch dia 150mm silicon carbide tioata tasi (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch vasega 4H-N 1.5mm SIC Wafers mo fatu tioata
E uiga i le Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), e lauiloa foi o le carborundum, o se semiconductor o loʻo i ai le silikoni ma le carbon faʻatasi ai ma le vailaʻau SiC.SiC o loʻo faʻaaogaina i masini eletise semiconductor o loʻo galue i le maualuga o le vevela poʻo le maualuga o voltage, poʻo le lua.SiC foi o se tasi o vaega taua o le LED, o se mea lauiloa mo le faʻatupulaia o masini GaN, ma e avea foi ma se vevela vevela i le maualuga- eletise eletise.
Fa'amatalaga
| Meatotino | 4H-SiC, Mata'u Tasi | 6H-SiC, Mata'itala Tasi |
| Lattice Parameter | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Fa'aputuga Fa'asologa | ABCB | ABCACB |
| Mohs Malosi | ≈9.2 | ≈9.2 |
| Malosi | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm.Fa'atele Fa'atele | 4-5×10-6/K | 4-5×10-6/K |
| Fa'asinoga Fa'atusa @750nm | leai = 2.61 | leai = 2.60 |
| Dielectric tumau | c~9.66 | c~9.66 |
| Amioga vevela (ituaiga N, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Fa'avevela vevela (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Va-vaa | 3.23 eV | 3.02 eV |
| Malae-Ilalo Eletise Malae | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
