8 Inisi N-ituaiga SiC Wafer

Fa'amatalaga Puupuu:

Semicera's 8 Inisi N-ituaiga SiC Wafers ua fa'ainisinia mo fa'aoga pito i tua i mea fa'aeletonika maualuga ma maualuga. O nei wafers e maua ai mea eletise sili atu ma vevela, faʻamautinoa le lelei o le faʻatinoga i siosiomaga faigata. Semicera e tuʻuina atu mea fou ma faʻamaoni i mea semiconductor.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera's 8 Inch N-type SiC Wafers o loʻo taʻimua i le faʻafouina o le semiconductor, e maua ai se faavae mautu mo le atinaʻeina o masini eletise maualuga. O nei wafers ua mamanuina e faʻafetaui ai manaʻoga faigata o faʻaoga faʻaonaponei faʻaonaponei, mai le eletise eletise e oʻo atu i taʻavale maualuga.

O le N-type doping i nei SiC wafers e faʻaleleia ai le faʻaogaina o le eletise, ma faʻaogaina lelei mo le tele o faʻaoga, e aofia ai le power diodes, transistors, ma amplifiers. O le fa'auluuluga maualuga e fa'amautinoa ai le fa'aitiitia o le malosi ma le fa'agaioiga lelei, lea e taua tele mo masini e fa'aogaina i laina maualuga ma le maualuga o le eletise.

O lo'o fa'aaogaina e le Semicera faiga fa'agasologa o le gaosiga e gaosia ai siC ​​wafers fa'atasi ai ma le tulaga fa'apitoa o le fa'aogaina o luga ma fa'aletonu laiti. O lenei tulaga o le sa'o e mana'omia mo talosaga e mana'omia ai le fa'atinoina faifaipea ma le tumau, e pei o le aerospace, ta'avale, ma pisinisi tau feso'ota'iga.

O le tu'ufa'atasia o Semicera's 8 Inch N-type SiC Wafers i lau laina gaosiga e maua ai se fa'avae mo le fatuina o vaega e mafai ona tatalia si'osi'omaga faigata ma le maualuga o le vevela. O nei wafers e lelei atoatoa mo talosaga i le suiga o le eletise, tekinolosi RF, ma isi fanua faigata.

Filifilia Semicera's 8 Inisi N-ituaiga SiC Wafers o lona uiga o le teu faafaigaluegaina i se oloa e tu'ufa'atasia le tulaga maualuga o mea fa'asaienisi ma inisinia sa'o. Semicera ua tuuto atu i le faʻalauteleina o gafatia o tekinolosi semiconductor, ofoina atu fofo e faʻaleleia ai le lelei ma le faʻamaoni o au masini eletise.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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