Silicon nitride fusia silikon carbide
Si3N4 faʻapipiʻi SiC ceramic refractory mea, ua fefiloi ma maualuga mama SIC paʻu lelei ma Silicon pauta, ina ua uma le lafo lafo ala, tali sintered i lalo o le 1400 ~ 1500 °C.I le taimi o le sintering vasega, faʻatumu le maualuga o le Nitrogen mama i totonu o le ogaumu, ona tali atu lea o le silikoni ma le Nitrogen ma faʻatupuina Si3N4, O lea o le Si3N4 faʻapipiʻi mea SiC e aofia ai le silicon nitride (23%) ma le silicon carbide (75%) e avea ma mea autu. , fefiloi ma mea faʻaola, ma faʻapipiʻiina i le faʻafefiloi, extrusion poʻo le sasaa, ona faia lea pe a uma ona faʻamago ma nitrogenization.
Fa'ailoga ma mea lelei:
1.Hfa'apalepale i le vevela
2. High conductivity vevela ma teteʻe tetee
3. High malosi faʻainisinia ma faʻafefe abrasion
4.Excellent malosi malosi ma le corrosion tetee
Matou te tuʻuina atu le maualuga ma le saʻo masini NSiC vaega ceramic lea e faʻaogaina e
1. Slip lafo
2. Extruding
3.Uni Axial Pressing
4. Isostatic Pressing
Pepa Fa'amaumauga o Mea
| > Tulaga Kemisi | Sic | 75% |
| Si3N4 | ≥23% | |
| Saoloto Si | 0% | |
| Tele tele (g/cm3) | 2.70～2.80 | |
| Fa'aaliga manino (%) | 12～15 | |
| Malosi punou ile 20 ℃(MPa) | 180～190 | |
| Malosi punou ile 1200 ℃(MPa) | 207 | |
| Malosi punou ile 1350 ℃(MPa) | 210 | |
| Malosi fa'amalosi ile 20 ℃(MPa) | 580 | |
| Fa'avevela vevela ile 1200 ℃(w/mk) | 19.6 | |
| Fa'ateleina le fa'amama vevela i1200 ℃(x 10-6/C) | 4.70 | |
| Tete'e te'i vevela | Lelei | |
| Max.vevela (℃) | 1600 | |
O le WeiTai Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa semiconductor ceramics ma e na'o le pau lea o le gaosiga i Saina e mafai ona tu'uina atu i le taimi e tasi le sima carbide silicon mama (aemaise le Recrystallized SiC) ma le CVD SiC coating.E le gata i lea, o loʻo tuʻuina atu foi la matou kamupani i fanua sima e pei o alumina, alumini nitride, zirconia, ma silicon nitride, ma isi.
O a tatou oloa autu e aofia ai: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer boat (Photovoltaic & Semiconductor), silicon carbide furnace tube, silicon carbide cantilever foe, silicon carbide chucks, silicon carbide beam, faapea foi ma le CVD SiC coating ma le TaC ufiufi.O oloa e masani ona faʻaaogaina i le semiconductor ma photovoltaic alamanuia, e pei o meafaigaluega mo le tuputupu aʻe tioata, epitaxy, etching, afifiina, ufiufi ma faʻasalalauga ogaumu, ma isi.
O la matou kamupani o loʻo i ai le gaosiga atoatoa o meafaigaluega e pei o le faʻapipiʻiina, sintering, gaioiga, mea faʻapipiʻi, ma isi mea, e mafai ona faʻamaeʻaina uma fesoʻotaʻiga talafeagai o le gaosiga o oloa ma maua ai le maualuga o le puleaina o le lelei o oloa;O le fuafuaga sili ona lelei e mafai ona filifilia e tusa ai ma manaʻoga o le oloa, e mafua ai le tau maualalo ma tuʻuina atu i tagata faʻatau oloa faʻatauvaʻa;E mafai ona matou fetuutuunai ma lelei le faʻatulagaina o le gaosiga e faʻavae i luga o manaʻoga tuʻuina atu o faʻatonuga ma faʻatasi ma faiga faʻatonu i luga ole laiga, tuʻuina atu i tagata faʻatau le taimi vave ma sili atu ona faʻamaonia.
