Semicerafaailoa atu le850V Malosi maualuga GaN-on-Si Epi Wafer, o se fa'alavelave i le fa'afouga semiconductor. O lenei epi wafer maualuga e tuʻufaʻatasia le maualuga o le Gallium Nitride (GaN) faʻatasi ai ma le tau-lelei o Silicon (Si), fatuina se fofo mamana mo talosaga maualuga-voltage.
Vaega Autu:
•Uunaiga Maualuluga Voltage: Faʻainisinia e lagolago e oʻo atu i le 850V, o lenei GaN-on-Si Epi Wafer e lelei mo le manaʻomia o le eletise eletise, faʻatagaina le maualuga ma le faʻatinoga.
•Fa'ateleina Malosi'i: Faʻatasi ai ma le faʻaogaina o le eletise sili atu ma le faʻaogaina o le vevela, o le GaN tekinolosi e mafai ai ona faʻapipiʻi mamanu ma faʻateleina le malosi.
•Fofo taugofie: E ala i le fa'aogaina o le silikoni e fai ma mea'ai, o lenei epi wafer e ofoina atu se tau-lelei fa'atauga i gaN wafers masani, e aunoa ma le fetuutuunai i le lelei po'o le fa'atinoga.
•Lautele Fa'aaogāga: Atoatoa mo le faʻaaogaina i mea faʻaliliu eletise, RF amplifier, ma isi masini eletise eletise, faʻamautinoa le faʻamaoni ma le tumau.
Su'esu'e le lumana'i o tekonolosi maualuga ma Semicera's850V Malosi maualuga GaN-on-Si Epi Wafer. Fuafuaina mo faʻaoga faʻapitoa, o lenei oloa e faʻamautinoaina le faʻaogaina o au masini faʻaeletoroni ma le maualuga ma le faʻamaoni. Filifili Semicera mo lou isi augatupulaga e manaʻomia semiconductor.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Parata tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga o mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amama | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
