GaN Epitaxy

Fa'amatalaga Puupuu:

GaN Epitaxy o se maatulimanu i le gaosiga o masini semiconductor maualuga, e ofoina atu le tulaga lelei, faʻamautu faʻamafanafana, ma le faʻamaoni. Semicera's GaN Epitaxy solutions e fa'amalieina e fa'amalieina mana'oga o fa'aoga pito sili ona lelei, fa'amautinoaina le maualuga ma le tumau i vaega uma.


Fa'amatalaga Oloa

Faailoga o oloa

Semicerao lo'o fa'ailoa mai ma le fa'amaualuga lona pito siliGaN Epitaxy'au'aunaga, ua mamanuina e fa'afetaui ai mana'oga fa'atuputeleina o le alamanuia semiconductor. Gallium nitride (GaN) o se mea e iloa mo ona uiga faʻapitoa, ma o matou faʻagasologa o le tuputupu aʻe o le epitaxial e faʻamautinoa ai o loʻo faʻataunuʻuina atoatoa nei faʻamanuiaga i au masini.

Layers GaN maualuga Semicerafaʻapitoa i le gaosiga o tulaga maualugaGaN Epitaxyfa'afanua, ofoina atu le mama atoatoa meafaitino ma le fa'atulagaina fa'amaoni. O nei laulau e taua tele mo le tele o faʻaoga, mai le eletise eletise i le optoelectronics, lea e manaʻomia ai le maualuga o le faʻatinoga ma le faʻamaoni. O a matou metotia faʻatupulaia saʻo e faʻamautinoa ai e ausia e taʻitasi GaN ia tulaga faʻapitoa e manaʻomia mo masini faʻapitoa.

Fa'atonuina mo le Fa'atinoO leGaN Epitaxysaunia e Semicera ua fa'ainisinia fa'apitoa e fa'aleleia ai le lelei o au vaega fa'aeletoroni. E ala i le tuʻuina atu o faʻamaʻi maualalo, maualuga le mama GaN layers, matou te mafai ai ona faʻaogaina masini i luga o laina maualuga ma voltages, faʻatasi ai ma le faʻaitiitia o le eletise. O lenei fa'ata'ita'iga o le ki lea mo fa'aoga e pei o le maualuga-eletonika-mobility transistors (HEMTs) ma moli-emitting diodes (LEDs), lea e sili ona taua le lelei.

Avanoa Talosaga Fetuuna'i Semicera'sGaN Epitaxye tele, fa'amalieina le tele o alamanuia ma fa'aoga. Pe o lo'o e atia'e mea fa'aola eletise, vaega RF, po'o le laser diodes, o matou GaN epitaxial layers e maua ai le fa'avae mana'omia mo masini fa'atuatuaina maualuga. E mafai ona fa'atulagaina a matou fa'agasologa ina ia fa'amalieina mana'oga fa'apitoa, fa'amautinoa e maua e au oloa i'uga lelei.

Tautinoga i Tulaga LeleiO le tulaga lelei o le maatulimanu oSemicera's approach toGaN Epitaxy. Matou te faʻaaogaina tekinolosi faʻatupulaia epitaxial ma faiga faʻatonutonu lelei e maua ai le GaN laulau e faʻaalia ai le tutusa lelei, maualalo le faʻaletonu, ma mea e sili atu. O lenei tautinoga i tulaga lelei e faʻamautinoa ai e le gata ina ausia au masini ae sili atu i tulaga o alamanuia.

Fa'atekonolosi Fa'atuputupula'ia Semicerao lo'o taulamua i le fa'afouga i le fanua oGaN Epitaxy. O loʻo faʻaauau pea ona suʻesuʻeina e la matou 'au auala fou ma tekinolosi e faʻaleleia ai le faʻagasologa o le tuputupu aʻe, tuʻuina atu le GaN layers ma faʻaleleia atili eletise ma faʻamafanafana. O nei fa'afouga fa'aliliuina i masini e sili atu ona fa'atinoina, e mafai ona fa'afetaui mana'oga o isi augatupulaga talosaga.

Fofo Fa'apitoa mo Au PoloketiI le iloaina o poloketi taitasi e iai manaoga tulaga ese,Semiceraofo fa'apitoaGaN Epitaxyfofo. Pe e te manaʻomia ni faʻamatalaga faʻapitoa o doping, mafiafia o le lapisi, poʻo le faʻamaeʻaina o luga, matou te galulue vavalalata ma oe e atiaʻe se faiga e fetaui ma ou manaʻoga tonu. O la matou sini o le tuʻuina atu ia te oe o GaN layers e saʻo faʻainisinia e lagolago ai le faʻatinoga ma le faʻamaoni o lau masini.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

tech_1_2_size
SiC wafers

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