Umi Au'aunaga Ola SiC fa'apipi'i Graphite Carrier mo le la'au mamago

Umi Au'aunaga Ola SiC Coated Graphite Carrier Mo le La Wafer Ata Fa'aalia

Fa'amatalaga Puupuu:

Silicon carbide o se ituaiga fou o sima ma maualuga tau faʻatinoga ma mea sili ona lelei. Ona o foliga e pei o le malosi maualuga ma le maʻaʻa, maualuga le vevela o le vevela, le tele o le vevela ma le faʻamaʻiina o vailaʻau, Silicon Carbide e toetoe lava a mafai ona tatalia uma vailaʻau. O le mea lea, o le SiC e faʻaaogaina lautele i le suauʻu suauʻu, vailaʻau, masini ma vaalele, e oʻo lava i le malosi faaniukilia ma le militeli o loʻo i ai a latou manaʻoga faʻapitoa ile SIC. O nisi faʻaoga masani e mafai ona matou ofoina atu o mama faʻamaufaʻailoga mo pamu, valve ma le ofutau puipui ma isi.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Tulaga lelei

Tete'e o le oxidation maualuga vevela
Sili ona tetee Corrosion
Lelei abrasion tetee
maualuga maualuga o le faʻafefe o le vevela
Self-lubricity, maualalo le mamafa
Malosi maualuga
Fa'ailoga fa'apitoa.

Talosaga

-Fa'asa'o fa'aofuofu fanua: fa'ato'aga, ipu, fa'asusu oneone, fa'alava afā, pa'u olo, ma isi...
-Mata'a maualuga fanua: siC Slab, Quenching ogaumu Tube, Radiant Tube, ipu, Elemene faʻavevela, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC vaʻa, Kiln Car Structure, Seti, ma isi.
-Silicon Carbide Semiconductor: SiC wafer va'a, sic chuck, sic foe, sic kaseti, sic diffusion tube, wafer fork, suction plate, guideway, etc.
-Silicon Carbide Seal Field: ituaiga uma o faʻamaufaʻailoga mama, faʻamau, togavao, ma isi.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, ma isi.
- Lithium Battery Field

WAFER (1)

WAFER (2)

Meatotino Faaletino O SiC

Meatotino	Taua	Metotia
Malosi	3.21 g/cc	Sink-opeopea ma le fua
vevela faapitoa	0.66 J/g °K	Emo leisa fa'amalo
Malosi fa'apa'u	450 MPa 560 MPa	4 mata pi'o, RT4 mata pi'o, 1300°
Malosi gau	2.94 MPa m1/2	Microindentation
Malosi	2800	Vicker's, 500g uta
Elastic ModulusYoung's Modulus	450 GPa430 GPa	4 pt pi'o, RT4 pt pi'o, 1300 °C
Tele o saito	2 – 10 µm	SEM

Meatotino vevela o le SiC

Amioga vevela	250 W/m °K	Metotia uila laser, RT
Fa'alauteleina o le vevela (CTE)	4.5 x 10-6 °K	O le vevela o le potu i le 950 °C, silica dilatometer

Vaega Fa'atekinisi

Aitema	Vaega	Fa'amaumauga
Aitema	Vaega	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC anotusi	%	85	75	99	99.9	≥99
Mea e maua fua le kakoni	%	15	0	0	0	0
Max auaunaga vevela	℃	1380	1450	1650	1620	1400
Malosi	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Matala porosity	%	0	13-15	0	15-18	7-8
Malosi punou 20℃	Mpa	250	160	380	100	/
Malosi punou 1200℃	Mpa	280	180	400	120	/
Modulus o elasticity 20 ℃	Gpa	330	580	420	240	/
Modulus o elasticity 1200 ℃	Gpa	300	/	/	200	/
Fa'avevela vevela 1200℃	W/mK	45	19.6	100-120	36.6	/
Coefficient o le faalauteleina o le vevela	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

O le CVD silicon carbide coating i luga o le pito i fafo o recrystallized silicon carbide ceramic oloa e mafai ona oʻo atu i le mama o le sili atu i le 99.9999% e faʻafetaui ai manaʻoga o tagata faʻatau i le semiconductor alamanuia.