Semiconductor Silicon fa'avae GaN epitaxy

Fa'amatalaga Puupuu:

Semicera Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa semiconductor ceramics ma e na'o le pau lea o le gaosiga i Saina e mafai ona tu'uina atu i le taimi e tasi le silicon carbide ceramic (aemaise le Recrystallized SiC) ma le CVD SiC coating. E le gata i lea, o loʻo tuʻuina atu foi la matou kamupani i fanua sima e pei o alumina, alumini nitride, zirconia, ma silicon nitride, ma isi.

 

Fa'amatalaga Oloa

Faailoga o oloa

Epitaxy GaN fa'avae silikoni

Fa'amatalaga o oloa

O la matou kamupani e tuʻuina atu auaunaga faʻapipiʻi SiC e ala i le auala CVD i luga o le graphite, ceramics ma isi mea, ina ia mafai ai e kasa faʻapitoa o loʻo i ai carbon ma silicon ona tali atu i le maualuga o le vevela e maua ai le mama maualuga SiC mole, molelaʻau teuina i luga o mea faʻapipiʻi, fa'atūina le SIC fa'apipi'i puipui.

Vaega autu:

1. maualuga le vevela oxidation tetee:

o loʻo lelei tele le faʻamaʻiina o le faʻamaʻi pe a maualuga le vevela ile 1600 C.

2. maualuga le mama: faia e vailaau ausa tuu i lalo o le maualuga vevela tulaga chlorination.

3. Erosion tete'e: maualuga ma'a'a, fa'apipi'i luga, vaega laiti.

4. Tete'e a'a: acid, alkali, masima ma organic reagents.

Fa'amatalaga autu o le CVD-SIC Coating

SiC-CVD Meatotino

Fauga tioata

FCC β vaega

Malosi

g/cm ³

3.21

Malosi

Vickers maaa

2500

Tele o Saito

μm

2~10

Vailaau Mama

%

99.99995

Malosiaga vevela

J·kg-1 ·K-1

640

Sulimation Temperature

2700

Malosi Felexural

MPa (RT 4-point)

415

Young's Modulus

Gpa (4pt pi'o, 1300℃)

430

Fa'alauteleina o le vevela (CTE)

10-6K-1

4.5

Fa'avevela vevela

(W/mK)

300

Semicera Nofoaga faigaluega
Semicera fale faigaluega 2
Meafaigaluega masini
CNN faʻagaioiga, vailaʻau faʻamamaina, faʻapipiʻi CVD
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