Silicon Carbide Substrates|SiC Wafers

Fa'amatalaga Puupuu:

Semicera Energy Technology Co., Ltd. ose ta'ita'i fa'atau oloa fa'apitoa i mea fa'atau ma semiconductor fa'atau. Matou te faʻamaoni i le tuʻuina atu o oloa maualuga, faʻatuatuaina, ma fou i le gaosiga o semiconductor, photovoltaic alamanuia ma isi faʻalapotopotoga faʻapitoa.

O la matou laina oloa e aofia ai SiC / TaC faʻapipiʻiina oloa graphite ma oloa sima, e aofia ai mea eseese e pei o le silicon carbide, silicon nitride, ma le alumini oxide ma isi.

I le taimi nei, ua na oi matou le gaosiga e tuʻuina atu le mama 99.9999% SiC coating ma le 99.9% recrystallized silicon carbide. Ole umi ole umi ole SiC e mafai ona tatou faia 2640mm.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Silicon carbide (SiC) mea tioata tasi o loʻo i ai le lautele o le va tele (~ Si 3 taimi), conductivity vevela maualuga (~ Si 3.3 taimi po o GaAs 10 taimi), maualuga electron saturation fua faatatau (~ Si 2.5 taimi), eletise malepe maualuga. fanua (~ Si 10 taimi po o GaAs 5 taimi) ma isi uiga mataʻina.

O masini SiC o loʻo i ai tulaga lelei e le mafai ona suia i le tulaga o le maualuga o le vevela, o le maualuga o le mamafa, o le tele o taimi, o masini eletise eletise ma le tele o faʻaogaina o le siosiomaga e pei o le aerospace, militeri, malosi faaniukilia, ma isi, e faʻaogaina ai le faaletonu o masini semiconductor masani i le faʻatinoga. talosaga, ma ua faasolosolo malie lava ona avea ma tulaga autu o eletise eletise.

4H-SiC Silicon carbide substrate faʻamatalaga

Aitema项目	Fa'amatalaga 参数
Polytype 晶型	4H -SiC	6H- SiC
Diamita 晶圆直径	2 inisi \| 3 inisi \| 4 inisi \| 6 inisi	2 inisi \| 3 inisi \| 4 inisi \| 6 inisi
mafiafia 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Conductivity 导电类型	N – ituaiga / Semi-insulating N型导电片/ 半绝缘片	N – ituaiga / Semi-insulating N型导电片/ 半绝缘片
Fa'amamafa 掺杂剂	N2 ( Nitrogen )V ( Vanadium )	N2 ( Nitrogen ) V ( Vanadium )
Fa'atonuga 晶向	I luga ole axis <0001> Pepe le axis <0001> pa'u 4°	I luga ole axis <0001> Pepe le axis <0001> pa'u 4°
Tete'e 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Malosi'i ole paipa (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Aufana 翘曲度	≤25 μm	≤25 μm
Laufanua 表面处理	DSP/SSP	DSP/SSP
Vasega 产品等级	Gaosiga / Su'esu'ega vasega	Gaosiga / Su'esu'ega vasega
Fa'asologa Fa'aputuga tioata 堆积方式	ABCB	ABCABC
Lattice parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Fa'ata'ita'iga/eV(Fa'a-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric tumau) 介电常数	9.6	9.66
Fa'asinoga Fa'atusa 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate faʻamatalaga

Aitema项目	Fa'amatalaga 参数
Polytype 晶型	6H-SiC
Diamita 晶圆直径	4 inisi \| 6 inisi
mafiafia 厚度	350μm ~ 450μm
Conductivity 导电类型	N – ituaiga / Semi-insulating N型导电片/ 半绝缘片
Fa'amamafa 掺杂剂	N2(Nitrogen) V ( Vanadium )
Fa'atonuga 晶向	<0001> ese 4°± 0.5°
Tete'e 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Ituaiga)
Malosi'i ole paipa (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Aufana 翘曲度	≤25 μm
Laufanua 表面处理	Mata: CMP, Epi-Sauni C Folafolaga: Optical Polish
Vasega 产品等级	Vasega su'esu'e