GaAs Wafers|GaAs Epi Wafers|Galllium Arsenide Substrates

Fa'amatalaga Puupuu:

O le WeiTai Energy Technology Co., Ltd. ose kamupani ta'uta'ua e fa'apitoa i mea fa'atau ma semiconductor.Matou te faʻamaoni i le tuʻuina atu o oloa maualuga, faʻatuatuaina, ma faʻafouina i le gaosiga o semiconductor, alamanuia photovoltaic ma isi faʻalapotopotoga faʻapitoa.

O la matou laina oloa e aofia ai SiC / TaC faʻapipiʻiina oloa graphite ma oloa sima, e aofia ai mea eseese e pei o le silicon carbide, silicon nitride, ma le alumini oxide ma isi.

I le taimi nei, ua na oi matou le gaosiga e tuʻuina atu le mama 99.9999% SiC coating ma le 99.9% recrystallized silicon carbide.Ole umi ole umi ole SiC e mafai ona tatou faia 2640mm.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

GaAs substrates ua vaevaeina i conductive ma semi-insulating, lea e masani ona faaaogaina i leisa (LD), semiconductor moli-emitting diode (LED), leisa latalata-infrared, quantum lelei leisa maualuga-mana ma maualuga-lelei paneta solar.HEMT ma le HBT tupe meataalo mo radar, microwave, millimita galu po'o le ultra-maualuga saoasaoa komepiuta ma feso'ota'iga mata;Leitio fa'aogaina masini mo feso'ota'iga uaealesi, 4G, 5G, feso'ota'iga satelite, WLAN.

Talu ai nei, gallium arsenide substrates ua faia foi le alualu i luma tele i le laititi-LED, Micro-LED, ma le mumu mumu, ma o loʻo faʻaaogaina lautele i masini faʻaogaina AR / VR.

Diamita 晶片直径	50mm \|75mm \|100mm \|150mm
Metotia Tuputupu 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Mafiafia Wafer 厚度	350 um ~ 625 um
Fa'atonuga 晶向	<100> / <111> / <110> poʻo isi
Ituaiga Conductive 导电类型	P - ituaiga / N - ituaiga / Semi-insulating
Ituaiga/Dopant 掺杂剂	Zn / Si / tatala
Fa'atonuga o le avefe'au 载流子浓度	1E17 ~ 5E19 cm-3
Resistivity ile RT 室温电阻率(ohm•cm)	≥1E7 mo SI
Fe'avea'i 迁移率(cm2/V•Sec)	≥4000
EPD(Etch Pit Density) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Aufana 翘曲度	≤ 20 um
Fa'ai'uga 表面	DSP/SSP
Faailoga leisa 激光码
Vasega 等级	Epi fa'aiila togi / fa'ainisinia