Fa'amatalaga
Wafer CarriersmaSilicon Carbide (SiC) fa'apipi'imai semicera ua mamanuina faʻapitoa mo le faʻatupulaia o le epitaxial maualuga, faʻamautinoa iʻuga sili ona lelei i totonuO le EpitaxymaSiC Epitaxytalosaga. Semicera's precision-engineered carriers ua fausia e tetee atu i tulaga ogaoga, ma avea ma vaega taua i le MOCVD Susceptor system mo alamanuia e manaʻomia ai le maualuga ma le tumau.
O nei va'a wafer e fegalegaleai, lagolagoina faiga taua ma meafaigaluega e pei oPSS Etching Carrier, ICP Etching Carrier, maRTP Carrier. O latou SiC Coating malosi e faʻaleleia ai le faʻatinoga mo faʻaoga pei oLED EpitaxialSusceptor ma Monocrystalline Silicon, faʻamautinoaina taunuʻuga e oʻo lava i siosiomaga faigata.
E maua i le tele o fetuutuunaiga, e pei o le Barrel Susceptor ma Pancake Susceptor, o nei avetaʻavale e taua tele i le gaosiga o le photovoltaic ma le semiconductor, lagolagoina le gaosiga o Vaega Photovoltaic ma faʻafaigofie GaN i faiga SiC Epitaxy. Faatasi ai ma a latou mamanu sili atu, o nei avetaʻavale o se aseta autu mo tagata gaosi oloa e faʻamoemoe mo le gaosiga maualuga.
Vaega Autu
1 .High mama SiC ufiufi graphite
2. Tete'e vevela sili & tutusa vevela
3. LeleiSiC ua ufiufi tioatamo se mea lamolemole
4. Maumau maualuga e faasaga i le faamamaina o vailaau
Fa'amatalaga autu o le CVD-SIC Coatings:
SiC-CVD | ||
Malosi | (g/cc) | 3.21 |
Malosi fa'apa'u | (Mpa) | 470 |
Fa'alauteleina o le vevela | (10-6/K) | 4 |
Fa'avevela vevela | (W/mK) | 300 |
afifiina ma uta
Avanoa Avanoa:
10000 Piece/Pieces i le masina
afifiina ma Tiliva:
Fa'aputuina: Fa'auma ma Malosi
Poly taga + Pusa + Pusa + Pusa
Taulaga:
Ningbo/Shenzhen/Shanghai
Taimi muamua:
Aofa'i (Isi) | 1-1000 | >1000 |
Est. Taimi(aso) | 30 | Ia feutagai |