Semiceraua fiafia e ofo atu2" Gallium Oxide Substrates, o se mea faʻapipiʻi ua fuafuaina e faʻaleleia ai le faʻatinoga o masini semiconductor maualuga. O mea'ai nei, na faia mai le Gallium Oxide (Ga2O3), fa'aalia se va'a tele-lautele, ma avea ai i latou ma filifiliga lelei mo fa'aoga-maualuga, maualuga-televave, ma UV optoelectronic talosaga.
Vaega Autu:
• Ultra-Wide Bandgap: O le2" Gallium Oxide Substratestuʻuina atu se fusi faʻapitoa e tusa ma le 4.8 eV, faʻatagaina mo le maualuga o le voltage ma le vevela faʻaogaina, e sili atu nai lo le gafatia o mea masani semiconductor e pei o le silicon.
•Malolo malepe tulaga ese: O mea nei e mafai ai e masini ona fa'atautaia le tele o voltage maualuga, ma fa'aatoatoaina mo eletise eletise, aemaise lava i fa'aoga maualuga-voltage.
•Lelei Fa'avevela Fa'avevela: Faʻatasi ai ma le faʻamautu maualuga o le vevela, o nei mea faʻapipiʻi e faʻaauau pea le faʻatinoga e oʻo lava i siʻosiʻomaga vevela vevela, lelei mo faʻaoga maualuga ma maualuga le vevela.
•Mea Maualuluga: O le2" Gallium Oxide Substratesofoina atu le maualalo densities faaletonu ma maualuga tioata, faʻamautinoaina le faʻatuatuaina ma le lelei faʻatinoga o au masini semiconductor.
•Talosaga Fetuuna'i: O nei substrates e fetaui mo le tele o talosaga, e aofia ai transistors eletise, Schottky diodes, ma UV-C LED masini, ofoina atu se faavae malosi mo le mana ma optoelectronic innovations.
Tatala le gafatia atoatoa o au masini semiconductor ma Semicera's2" Gallium Oxide Substrates. O a matou mea'ai ua mamanuina e faʻafetaui ai manaʻoga manaʻomia o talosaga faʻapitoa i aso nei, faʻamautinoa le maualuga o le faʻatinoga, faʻamaoni, ma le lelei. Filifili Semicera mo mea fa'aonaponei fa'akomepiuta fa'aonaponei e fa'aosoina le fa'afouga.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Fa'a tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga ole mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amamafa | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
