Gallium Nitride Substrates|GaN Wafers

O le vaega lona tolu o mea semiconductor e masani ona aofia ai SiC, GaN, taimane, ma isi, ona o lona lautele gap lautele (Eg) e sili atu pe tutusa ma le 2.3 electron volts (eV), e lauiloa foi o mea lautele gap semiconductor mea.Pe a faatusatusa i mea semiconductor augatupulaga muamua ma lona lua, o le lona tolu o augatupulaga semiconductor mea e maua ai le lelei o le conductivity vevela maualuga, fanua malepe eletise maualuga, maualuga saturated electron fua faatatau femalagaiga ma le malosi fusia maualuga, lea e mafai ona ausia manaoga fou o tekinolosi faaonaponei mo le maualuga. vevela, malosi maualuga, maualuga maualuga, maualuga taimi ma faʻavevela tetee ma isi tulaga faigata.O loʻo i ai faʻamoemoega faʻaoga taua i le fanua o le puipuiga a le atunuʻu, vaalele, aerospace, suʻesuʻega suauʻu, teuina faʻapitoa, ma isi, ma e mafai ona faʻaitiitia ai le malosi o le malosi e sili atu i le 50% i le tele o pisinisi faʻapitoa e pei o fesoʻotaʻiga lautele, malosi o le la, gaosiga o taavale, moli semiconductor, ma smart grid, ma e mafai ona faaitiitia le tele o meafaigaluega e sili atu i le 75%, lea e taua tele mo le atinaeina o le faasaienisi tagata ma tekinolosi.